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Title: Comparative Study of Solid-Phase Crystallization of Amorphous Silicon Deposited by Hot-Wire CVD, Plasma-Enhanced CVD, and Electron-Beam Evaporation

Abstract

Solid-phase crystallization (SPC) rates are compared in amorphous silicon films prepared by three different methods: hot-wire chemical vapor deposition (HWCVD), plasma-enhanced chemical vapor deposition (PECVD), and electron-beam physical vapor deposition (e-beam). Random SPC proceeds approximately 5 and 13 times slower in PECVD and e-beam films, respectively, as compared to HWCVD films. Doping accelerates random SPC in e-beam films but has little effect on the SPC rate of HWCVD films. In contrast, the crystalline growth front in solid-phase epitaxy experiments propagates at similar speed in HWCVD, PECVD, and e-beam amorphous Si films. This strongly suggests that the observed large differences in random SPC rates originate from different nucleation rates in these materials while the grain growth rates are relatively similar. The larger grain sizes observed for films that exhibit slower random SPC support this suggestion.

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
978477
DOE Contract Number:
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2007: Proceedings of the Materials Research Society Symposium, 9-13 April 2007, San Francisco, California; Materials Research Society Symposium Proceedings, Vol. 989; Related Information: Paper No. 0989-A16-04
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EPITAXY; EVAPORATION; GRAIN GROWTH; GRAIN SIZE; NUCLEATION; PHYSICAL VAPOR DEPOSITION; SILICON; VELOCITY; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Stradins, P., Kunz, O., Young, D. L., Yan, Y., Jones, K. M., Xu, Y., Reedy, R. C., Branz, H. M., Aberle, A. G., and Wang, Q.. Comparative Study of Solid-Phase Crystallization of Amorphous Silicon Deposited by Hot-Wire CVD, Plasma-Enhanced CVD, and Electron-Beam Evaporation. United States: N. p., 2007. Web.
Stradins, P., Kunz, O., Young, D. L., Yan, Y., Jones, K. M., Xu, Y., Reedy, R. C., Branz, H. M., Aberle, A. G., & Wang, Q.. Comparative Study of Solid-Phase Crystallization of Amorphous Silicon Deposited by Hot-Wire CVD, Plasma-Enhanced CVD, and Electron-Beam Evaporation. United States.
Stradins, P., Kunz, O., Young, D. L., Yan, Y., Jones, K. M., Xu, Y., Reedy, R. C., Branz, H. M., Aberle, A. G., and Wang, Q.. Mon . "Comparative Study of Solid-Phase Crystallization of Amorphous Silicon Deposited by Hot-Wire CVD, Plasma-Enhanced CVD, and Electron-Beam Evaporation". United States. doi:.
@article{osti_978477,
title = {Comparative Study of Solid-Phase Crystallization of Amorphous Silicon Deposited by Hot-Wire CVD, Plasma-Enhanced CVD, and Electron-Beam Evaporation},
author = {Stradins, P. and Kunz, O. and Young, D. L. and Yan, Y. and Jones, K. M. and Xu, Y. and Reedy, R. C. and Branz, H. M. and Aberle, A. G. and Wang, Q.},
abstractNote = {Solid-phase crystallization (SPC) rates are compared in amorphous silicon films prepared by three different methods: hot-wire chemical vapor deposition (HWCVD), plasma-enhanced chemical vapor deposition (PECVD), and electron-beam physical vapor deposition (e-beam). Random SPC proceeds approximately 5 and 13 times slower in PECVD and e-beam films, respectively, as compared to HWCVD films. Doping accelerates random SPC in e-beam films but has little effect on the SPC rate of HWCVD films. In contrast, the crystalline growth front in solid-phase epitaxy experiments propagates at similar speed in HWCVD, PECVD, and e-beam amorphous Si films. This strongly suggests that the observed large differences in random SPC rates originate from different nucleation rates in these materials while the grain growth rates are relatively similar. The larger grain sizes observed for films that exhibit slower random SPC support this suggestion.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}

Conference:
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