Dopant-Induced Nanoscale Electronic Inhomogeneities in Ca_2-xSr_xRuO₄

Journal Article · Sun Jan 01 00:00:00 EST 2006 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.96.066401· OSTI ID:978069

Zhang, Jiandi ^[1]; Moore, R. G. ^[2]; Wang, S. -C. ^[3]; Ding, H. ^[3]; Jin, Rongying ^[4]; Mandrus, David ^[4]; Plummer, E Ward ^[4]

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1. Florida International University, Miami
2. University of Tennessee, Knoxville (UTK)
3. Boston College, Chestnut Hill
4. ORNL

Ca{sub 2-x}Sr{sub x}RuO{sub 4} single crystals with 0.1 {le} x {le} 2.0 have been studied systematically using scanning tunneling microscopy (STM) and spectroscopy, low-energy electron diffraction, and angle resolved photoelectron spectroscopy (ARPES). In contrast with the well-ordered lattice structure, the local density of states at the surface clearly shows a strong doping dependent nanoscale electronic inhomogeneity, regardless of the fact of isovalent substitution. Remarkably, the surface electronic roughness measured by STM and the inverse spectral weight of quasiparticle states determined by ARPES are found to vary with x in the same manner as the bulk in-plane residual resistivity, following the Nordheim rule. For the first time, the surface measurements - especially those with STM - are shown to be in good agreement with the bulk transport results, all clearly indicating a doping-induced electronic disorder in the system.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 978069
• Journal Information: Physical Review Letters, Vol. 96, Issue 6; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRON DIFFRACTION
MONOCRYSTALS
PHOTOELECTRON SPECTROSCOPY
ROUGHNESS
SCANNING TUNNELING MICROSCOPY
SPECTROSCOPY
TRANSPORT
Dopant
Nanoscale
Inhomogeneities