Formation of CdS Nanocrystals in SiO2 by Ion Implantation
- R. Boskovic Institute, Zagreb, Croatia
- Zagreb University, Zagreb, Croatia
- ORNL
We present a systematic study of the influence of ion dose and post-implantation annealing on the synthesis and growth of CdS nanocrystals in a SiO{sub 2} matrix. Nanocrystals were obtained after implantation of monoenergetic Cd and S ions and subsequent annealing in a very wide range of annealing temperatures, T{sub a}. The average size, as determined from the blue shift of band gap E{sub g}, varied from 3.5-4.5 to 10 nm, depending on implantation and annealing parameters. For the highest dose, 10{sup 17} ions/cm{sup 2}, the synthesis of CdS phase starts already during implantation. For T{sub a} above 700 C, large nanocrystals (9-10 nm) prevail for all doses. High energy optical transitions, identified as the E{sub 1A} and E{sub 1B} transitions of hexagonal CdS, were also observed after annealings at higher temperature.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 978062
- Journal Information:
- Journal of Non-Crystalline Solids, Vol. 299-302, Issue 2; ISSN 0022-3093
- Country of Publication:
- United States
- Language:
- English
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