Formation of hydrogen complexes in proton implanted silicon and their influence on the crystal damage
- Tobias Franz
- Amit
- Lin
- Wolfgang
We studied the rearrangement of ion-implanted hydrogen in <100> oriented n-type silicon wafers upon annealing and its effect on the crystal damage. The silicon samples were implanted with 42 keV protons to a dose of 2 x 10{sup 16} H/cm{sup 2} and subsequently vacuum annealed at temperatures ranging from 200 C to 500 C. The evolution of the H-concentration and the crystal damage depth profiles during the heat treatments were investigated through the combined use of elastic recoil detection (ERD) analysis, secondary ion mass spectroscopy (SIMS), and Rutherford backscattering spectroscopy (RBS) in channeling mode. The obtained results reveal information about the damage accumulation caused by the thermally induced rearrangement of the implanted Hydrogen. The gained knowledge was correlated to the depth dist ributions and orientations of H-platelets, which formed during annealing and were examined by cross-section transmission electron microscopy (XTEM) analysis.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 977832
- Report Number(s):
- LA-UR-04-6022; TRN: US201012%%752
- Resource Relation:
- Journal Volume: 242; Journal Issue: 1-2; Conference: Submitted to: Ion Beam Modification of Materials (IBMM 2004), Monterey, California, USA, 9-5-04 to 9-10-04
- Country of Publication:
- United States
- Language:
- English
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