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Title: Pulsed-Laser Deposition of Textured Cerium Oxide Thin Films on Glass Substrates at Room Temperature

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Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
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DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Thin Solid Films; Journal Volume: 515; Journal Issue: 17, 2007
Country of Publication:
United States

Citation Formats

Chaudhuri, T., Phok, S., and Bhattacharya, R. Pulsed-Laser Deposition of Textured Cerium Oxide Thin Films on Glass Substrates at Room Temperature. United States: N. p., 2007. Web. doi:10.1016/j.tsf.2007.01.053.
Chaudhuri, T., Phok, S., & Bhattacharya, R. Pulsed-Laser Deposition of Textured Cerium Oxide Thin Films on Glass Substrates at Room Temperature. United States. doi:10.1016/j.tsf.2007.01.053.
Chaudhuri, T., Phok, S., and Bhattacharya, R. Mon . "Pulsed-Laser Deposition of Textured Cerium Oxide Thin Films on Glass Substrates at Room Temperature". United States. doi:10.1016/j.tsf.2007.01.053.
title = {Pulsed-Laser Deposition of Textured Cerium Oxide Thin Films on Glass Substrates at Room Temperature},
author = {Chaudhuri, T. and Phok, S. and Bhattacharya, R.},
abstractNote = {},
doi = {10.1016/j.tsf.2007.01.053},
journal = {Thin Solid Films},
number = 17, 2007,
volume = 515,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
  • Conductive RuO{sub 2} thin films were grown on different substrates by pulsed laser deposition. Films deposited on MgO are of (110) orientation and of polycrystalline nature, while highly crystalline RuO{sub 2} films can be heteroepitaxially grown on LaAlO{sub 3} and yttria-stabilized zirconia (YSZ) substrates under proper processing conditions. The crystalline RuO{sub 2} thin films show metallic resistivity versus temperature characteristics and have a room-temperature resistivity of 35{plus_minus}2 {mu}{Omega}cm. A residual resistivity ratio ({rho}{sub 300 K}/{rho}{sub 4.2 K}) of around 5 has been achieved for the RuO{sub 2} thin films grown at a substrate temperature of 700{degree}C on both LaAlO{sub 3}more » and YSZ. {copyright} {ital 1996 American Vacuum Society}« less
  • Thin TiN films have been grown using reactive ion-beam assisted pulsed laser deposition. The texture development was in situ analyzed using reflection high-energy electron diffraction. Above 300 deg. C a sharp cube textured nucleation layer is observed using an ion beam with energies above 400 eV under an angle of 45 deg. relative to the substrate normal. The cube texture is not stable during further ion-beam assisted growth but can be preserved using homoepitaxial growth. Resulting films showed an in-plane orientation of about 13 deg. The texture development can be described in terms of energy considerations and anisotropic sputter rates.
  • Cerium oxide (CeO{sub 2}) buffer layers play an important role for the development of YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) based superconducting tapes using the rolling assisted biaxially textured substrates (RABiTS) approach. The chemical solution deposition (CSD) approach has been used to grow epitaxial CeO{sub 2} films on textured Ni-3 at.% W alloy substrates with various starting precursors of ceria. Precursors such as cerium acetate, cerium acetylacetonate, cerium 2-ethylhexanoate, cerium nitrate, and cerium trifluoroacetate were prepared in suitable solvents. The optimum growth conditions for these cerium precursors were Ar-4% H{sub 2} gas processing atmosphere, solution concentration levels of 0.2-0.5 M, amore » dwell time of 15 min, and a process temperature range of 1050-1150 deg. C. X-ray diffraction, AFM, SEM, and optical microscopy were used to characterize the CeO{sub 2} films. Highly textured CeO{sub 2} layers were obtained on Ni-W substrates with both cerium acetate and cerium acetylacetonate as starting precursors. YBCO films with a J {sub c} of 1.5 MA/cm{sup 2} were obtained on cerium acetylacetonate-based CeO{sub 2} films with sputtered YSZ and CeO{sub 2} cap layers.« less
  • We report a detailed study of the grain orientations and grain boundary (GB) networks in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) films {approx}0.8 m thick grown by both the in situ pulsed laser deposition (PLD) process and the ex situ metalorganic deposition (MOD) process on rolling-assisted biaxially textured substrates (RABiTS). The PLD and MOD growth processes result in columnar and laminar YBCO grain structures, respectively. In the MOD-processed sample [full-width critical current density J{sub c}(0 T, 77 K) = 3.4 MA/cm{sup 2}], electron back-scatter diffraction (EBSD) revealed an improvement in both the in-plane and out-of-plane alignment of the YBCO relative tomore » the template that resulted in a significant reduction of the total grain boundary misorientation angles. A YBCO grain structure observed above individual template grains was strongly correlated to larger out-of-plane tilts of the template grains. YBCO GBs meandered extensively about their corresponding template GBs and through the thickness of the film. In contrast, the PLD-processed film [full width J{sub c}(0 T, 77 K) = 0.9 MA/cm{sup 2}] exhibited nearly perfect epitaxy, replicating the template grain orientations. No GB meandering was observed in the PLD-processed film with EBSD. Direct transport measurement of the intra-grain J{sub c}(0 T, 77 K) values of PLD and MOD-processed films on RABiTS revealed values up to 4.5 and 5.1 MA/cm{sup 2}, respectively. As the intra-grain J{sub c} values were similar, the significantly higher full-width J{sub c} for the MOD-processed sample is believed to be due to the improved grain alignment and extensive GB meandering.« less
  • Beta-gallium oxide (β-Ga 2O 3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga 2O 3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga 2O 3 films on (0001) sapphire and (–201) Ga 2O 3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. As a result, there is a strong temperature dependencemore » to the phase formation, morphology, and electronic properties of β-Ga 2O 3 from 350 to 550 °C.« less