skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Design and Characterization of GaN/InGaN Solar Cells

Abstract

We experimentally demonstrate the III-V nitrides as a high-performance photovoltaic material with open-circuit voltages up to 2.4 V and internal quantum efficiencies as high as 60%. GaN and high-band gap InGaN solar cells are designed by modifying PC1D software, grown by standard commercial metal-organic chemical vapor deposition, fabricated into devices of variable sizes and contact configurations, and characterized for material quality and performance. The material is primarily characterized by x-ray diffraction and photoluminescence to understand the implications of crystalline imperfections on photovoltaic performance. Two major challenges facing the III-V nitride photovoltaic technology are phase separation within the material and high-contact resistances.

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
977288
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 91; Journal Issue: 13, 2007; Related Information: Article No. 132117
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; DEFECTS; DESIGN; ELECTRIC POTENTIAL; NITRIDES; PERFORMANCE; PHOTOLUMINESCENCE; SOLAR CELLS; X-RAY DIFFRACTION; Solar Energy - Photovoltaics

Citation Formats

Jani, O., Ferguson, I., Honsberg, C., and Kurtz, S. Design and Characterization of GaN/InGaN Solar Cells. United States: N. p., 2007. Web. doi:10.1063/1.2793180.
Jani, O., Ferguson, I., Honsberg, C., & Kurtz, S. Design and Characterization of GaN/InGaN Solar Cells. United States. doi:10.1063/1.2793180.
Jani, O., Ferguson, I., Honsberg, C., and Kurtz, S. Mon . "Design and Characterization of GaN/InGaN Solar Cells". United States. doi:10.1063/1.2793180.
@article{osti_977288,
title = {Design and Characterization of GaN/InGaN Solar Cells},
author = {Jani, O. and Ferguson, I. and Honsberg, C. and Kurtz, S.},
abstractNote = {We experimentally demonstrate the III-V nitrides as a high-performance photovoltaic material with open-circuit voltages up to 2.4 V and internal quantum efficiencies as high as 60%. GaN and high-band gap InGaN solar cells are designed by modifying PC1D software, grown by standard commercial metal-organic chemical vapor deposition, fabricated into devices of variable sizes and contact configurations, and characterized for material quality and performance. The material is primarily characterized by x-ray diffraction and photoluminescence to understand the implications of crystalline imperfections on photovoltaic performance. Two major challenges facing the III-V nitride photovoltaic technology are phase separation within the material and high-contact resistances.},
doi = {10.1063/1.2793180},
journal = {Applied Physics Letters},
number = 13, 2007,
volume = 91,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}