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Title: Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides

Abstract

Waveguiding by total internal reflection is demonstrated within Al{sub x}Ga{sub 1{minus}x}As semiconductor heterostructures which have been fully oxidized in water vapor at {approximately}490 C. Refractive index, mode propagation constant, propagation loss ({le}3 cm{sup {minus}1}) at {lambda}=1.3 and 1.55 {micro}m, secondary ion mass spectrometry depth profile, and Fourier transform infrared transmission spectra measurements are presented to characterize a multimode single heterostructure oxide waveguide. An index contrast of {Delta}n=0.06 is observed between oxidized x=0.4 and x=0.8 Al{sub x}Ga{sub 1{minus}x}As oxide layers. Absorption loss at 1.55 {micro}m is observed due to OH groups. Near-field images are presented showing waveguiding in a single-mode oxide double heterostructure.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
9755
Report Number(s):
SAND99-2115J
TRN: AH200125%%38
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Other Information: Submitted to Applied Physics Letters; PBD: 16 Aug 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; OXIDES; REFRACTIVE INDEX; WAVEGUIDES; INFRARED SPECTRA

Citation Formats

Luo, Y., Hall, D.C., Kou, L., Steingart, L., Jackson, J.H., Blum, O., and Hou, H. Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides. United States: N. p., 1999. Web. doi:10.1063/1.125236.
Luo, Y., Hall, D.C., Kou, L., Steingart, L., Jackson, J.H., Blum, O., & Hou, H. Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides. United States. doi:10.1063/1.125236.
Luo, Y., Hall, D.C., Kou, L., Steingart, L., Jackson, J.H., Blum, O., and Hou, H. Mon . "Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides". United States. doi:10.1063/1.125236. https://www.osti.gov/servlets/purl/9755.
@article{osti_9755,
title = {Oxidized Al(x)Ga(1-x)As Heterostructure Planar Waveguides},
author = {Luo, Y. and Hall, D.C. and Kou, L. and Steingart, L. and Jackson, J.H. and Blum, O. and Hou, H.},
abstractNote = {Waveguiding by total internal reflection is demonstrated within Al{sub x}Ga{sub 1{minus}x}As semiconductor heterostructures which have been fully oxidized in water vapor at {approximately}490 C. Refractive index, mode propagation constant, propagation loss ({le}3 cm{sup {minus}1}) at {lambda}=1.3 and 1.55 {micro}m, secondary ion mass spectrometry depth profile, and Fourier transform infrared transmission spectra measurements are presented to characterize a multimode single heterostructure oxide waveguide. An index contrast of {Delta}n=0.06 is observed between oxidized x=0.4 and x=0.8 Al{sub x}Ga{sub 1{minus}x}As oxide layers. Absorption loss at 1.55 {micro}m is observed due to OH groups. Near-field images are presented showing waveguiding in a single-mode oxide double heterostructure.},
doi = {10.1063/1.125236},
journal = {Applied Physics Letters},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {8}
}