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Title: EUV actinic defect inspection and defect printability at the sub-32 nm half pitch

Abstract

Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
Materials Sciences Division
OSTI Identifier:
974277
Report Number(s):
LBNL-2714E
TRN: US201007%%373
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Conference
Resource Relation:
Conference: 25th European mask and lithography conference, Dresden, Germany, Jan. 12-15, 2010
Country of Publication:
United States
Language:
English
Subject:
36; DEFECTS; MITIGATION; OWNERSHIP; PRODUCTION; SENSITIVITY

Citation Formats

Huh, Sungmin, Kearney, Patrick, Wurm, Stefan, Goodwin, Frank, Han, Hakseung, Goldberg, Kenneth, Mochi, Iacopp, and Gullikson, Eric M. EUV actinic defect inspection and defect printability at the sub-32 nm half pitch. United States: N. p., 2009. Web.
Huh, Sungmin, Kearney, Patrick, Wurm, Stefan, Goodwin, Frank, Han, Hakseung, Goldberg, Kenneth, Mochi, Iacopp, & Gullikson, Eric M. EUV actinic defect inspection and defect printability at the sub-32 nm half pitch. United States.
Huh, Sungmin, Kearney, Patrick, Wurm, Stefan, Goodwin, Frank, Han, Hakseung, Goldberg, Kenneth, Mochi, Iacopp, and Gullikson, Eric M. 2009. "EUV actinic defect inspection and defect printability at the sub-32 nm half pitch". United States. https://www.osti.gov/servlets/purl/974277.
@article{osti_974277,
title = {EUV actinic defect inspection and defect printability at the sub-32 nm half pitch},
author = {Huh, Sungmin and Kearney, Patrick and Wurm, Stefan and Goodwin, Frank and Han, Hakseung and Goldberg, Kenneth and Mochi, Iacopp and Gullikson, Eric M},
abstractNote = {Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.},
doi = {},
url = {https://www.osti.gov/biblio/974277}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Aug 01 00:00:00 EDT 2009},
month = {Sat Aug 01 00:00:00 EDT 2009}
}

Conference:
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