Colossal positive magnetoresistance in a doped nearly magnetic semiconductor
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb{sub 2}, a nearly magnetic or 'Kondo' semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.
- Research Organization:
- Ames Lab., Ames, IA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC02-07CH11358
- OSTI ID:
- 973682
- Report Number(s):
- IS-J 7391; TRN: US201006%%1055
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 77, Issue 8
- Country of Publication:
- United States
- Language:
- English
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