In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN.
Abstract
Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of In{sub x}Ga{sub 1-x}N on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.
- Authors:
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 972191
- Report Number(s):
- ANL/MSD/JA-65838
Journal ID: ISSN 0003-6951; APPLAB; TRN: US1001976
- DOE Contract Number:
- DE-AC02-06CH11357
- Resource Type:
- Journal Article
- Journal Name:
- Appl. Phys. Lett.
- Additional Journal Information:
- Journal Volume: 96; Journal Issue: 2010; Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- ENGLISH
- Subject:
- 36 MATERIALS SCIENCE; 43 PARTICLE ACCELERATORS; CHEMICAL VAPOR DEPOSITION; ORIGIN; RELAXATION; STRAINS; SYNCHROTRONS
Citation Formats
Richard, M -I, Highland, M J, Fister, T T, Munkholm, A, Mei, J, Streiffer, S K, Thompson, C, Fuoss, P H, Stephenson, G B, Univ. Paul Cezanne, Lighting Co, Philips Lumileds, Northern Illinois Univ., and Faculte des Sciences de St. Jerome. In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN.. United States: N. p., 2010.
Web. doi:10.1063/1.3293441.
Richard, M -I, Highland, M J, Fister, T T, Munkholm, A, Mei, J, Streiffer, S K, Thompson, C, Fuoss, P H, Stephenson, G B, Univ. Paul Cezanne, Lighting Co, Philips Lumileds, Northern Illinois Univ., & Faculte des Sciences de St. Jerome. In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN.. United States. https://doi.org/10.1063/1.3293441
Richard, M -I, Highland, M J, Fister, T T, Munkholm, A, Mei, J, Streiffer, S K, Thompson, C, Fuoss, P H, Stephenson, G B, Univ. Paul Cezanne, Lighting Co, Philips Lumileds, Northern Illinois Univ., and Faculte des Sciences de St. Jerome. 2010.
"In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN.". United States. https://doi.org/10.1063/1.3293441.
@article{osti_972191,
title = {In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN.},
author = {Richard, M -I and Highland, M J and Fister, T T and Munkholm, A and Mei, J and Streiffer, S K and Thompson, C and Fuoss, P H and Stephenson, G B and Univ. Paul Cezanne and Lighting Co, Philips Lumileds and Northern Illinois Univ. and Faculte des Sciences de St. Jerome},
abstractNote = {Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of In{sub x}Ga{sub 1-x}N on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.},
doi = {10.1063/1.3293441},
url = {https://www.osti.gov/biblio/972191},
journal = {Appl. Phys. Lett.},
issn = {0003-6951},
number = 2010,
volume = 96,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 2010},
month = {Fri Jan 01 00:00:00 EST 2010}
}
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