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Title: In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN.

Abstract

Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of In{sub x}Ga{sub 1-x}N on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
972191
Report Number(s):
ANL/MSD/JA-65838
Journal ID: ISSN 0003-6951; APPLAB; TRN: US1001976
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Appl. Phys. Lett.
Additional Journal Information:
Journal Volume: 96; Journal Issue: 2010; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; 43 PARTICLE ACCELERATORS; CHEMICAL VAPOR DEPOSITION; ORIGIN; RELAXATION; STRAINS; SYNCHROTRONS

Citation Formats

Richard, M -I, Highland, M J, Fister, T T, Munkholm, A, Mei, J, Streiffer, S K, Thompson, C, Fuoss, P H, Stephenson, G B, Univ. Paul Cezanne, Lighting Co, Philips Lumileds, Northern Illinois Univ., and Faculte des Sciences de St. Jerome. In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN.. United States: N. p., 2010. Web. doi:10.1063/1.3293441.
Richard, M -I, Highland, M J, Fister, T T, Munkholm, A, Mei, J, Streiffer, S K, Thompson, C, Fuoss, P H, Stephenson, G B, Univ. Paul Cezanne, Lighting Co, Philips Lumileds, Northern Illinois Univ., & Faculte des Sciences de St. Jerome. In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN.. United States. https://doi.org/10.1063/1.3293441
Richard, M -I, Highland, M J, Fister, T T, Munkholm, A, Mei, J, Streiffer, S K, Thompson, C, Fuoss, P H, Stephenson, G B, Univ. Paul Cezanne, Lighting Co, Philips Lumileds, Northern Illinois Univ., and Faculte des Sciences de St. Jerome. 2010. "In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN.". United States. https://doi.org/10.1063/1.3293441.
@article{osti_972191,
title = {In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN.},
author = {Richard, M -I and Highland, M J and Fister, T T and Munkholm, A and Mei, J and Streiffer, S K and Thompson, C and Fuoss, P H and Stephenson, G B and Univ. Paul Cezanne and Lighting Co, Philips Lumileds and Northern Illinois Univ. and Faculte des Sciences de St. Jerome},
abstractNote = {Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of In{sub x}Ga{sub 1-x}N on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.},
doi = {10.1063/1.3293441},
url = {https://www.osti.gov/biblio/972191}, journal = {Appl. Phys. Lett.},
issn = {0003-6951},
number = 2010,
volume = 96,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 2010},
month = {Fri Jan 01 00:00:00 EST 2010}
}