skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Synthesis of Ag nanoplates on GaAs wafers : evidence for growth mechanism.

Abstract

Direct synthesis of Ag nanoplates on GaAs wafers has been developed in our group through a simple solution/solid interfacial reaction (SSIR) strategy, in which aqueous solutions of pure AgNO{sub 3} react with the GaAs wafers at room temperature [J. Phys. Chem. C 2009, 113, 6061; 2008, 112, 8928; Chem. Mater. 2007, 19, 5845]. However, a number of questions are still not clear yet regarding the roles of different possible pathways for reducing Ag{sup +} ions in the growth of Ag nanoplates. In this article, we try to answer these remaining questions by specifically designing experiments and extracting direct evidence from systematic characterizations of different samples. It is conclusive that growth of high-quality Ag nanoplates on GaAs wafers is ascribed to the good separation between nucleation and growth steps, which are driven by two different reduction pathways. At the nucleation step, fast reduction of Ag{sup +} ions with a high concentration of surface electrons is crucial for the formation of Ag nuclei with multiple (111) twin planes parallel to each other, and remaining the environment of a high concentration of surface electrons for a period long enough is also important to develop the Ag nuclei into stable seeds. At the growthmore » step, a hole injection process is mainly responsible for reduction of Ag{sup +} ions to enlarge the stable seeds into Ag nanoplates with controlled sizes by tuning the growth time. The paralleled multiple (111) twin planes provide a crystalline confinement to guide the growth of the seeds into nanoplates.« less

Authors:
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
972188
Report Number(s):
ANL/CNM/JA-65335
Journal ID: ISSN 1932-7447; TRN: US201006%%984
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
J. Phys. Chem. C.
Additional Journal Information:
Journal Volume: 114; Journal Issue: 2 ; Jan. 21, 2010; Journal ID: ISSN 1932-7447
Country of Publication:
United States
Language:
ENGLISH
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; AQUEOUS SOLUTIONS; CONFINEMENT; ELECTRONS; NUCLEATION; NUCLEI; SEEDS; SYNTHESIS; TUNING

Citation Formats

Sun, Y, and Center for Nanoscale Materials. Synthesis of Ag nanoplates on GaAs wafers : evidence for growth mechanism.. United States: N. p., 2010. Web. doi:10.1021/jp909312g.
Sun, Y, & Center for Nanoscale Materials. Synthesis of Ag nanoplates on GaAs wafers : evidence for growth mechanism.. United States. doi:10.1021/jp909312g.
Sun, Y, and Center for Nanoscale Materials. Thu . "Synthesis of Ag nanoplates on GaAs wafers : evidence for growth mechanism.". United States. doi:10.1021/jp909312g.
@article{osti_972188,
title = {Synthesis of Ag nanoplates on GaAs wafers : evidence for growth mechanism.},
author = {Sun, Y and Center for Nanoscale Materials},
abstractNote = {Direct synthesis of Ag nanoplates on GaAs wafers has been developed in our group through a simple solution/solid interfacial reaction (SSIR) strategy, in which aqueous solutions of pure AgNO{sub 3} react with the GaAs wafers at room temperature [J. Phys. Chem. C 2009, 113, 6061; 2008, 112, 8928; Chem. Mater. 2007, 19, 5845]. However, a number of questions are still not clear yet regarding the roles of different possible pathways for reducing Ag{sup +} ions in the growth of Ag nanoplates. In this article, we try to answer these remaining questions by specifically designing experiments and extracting direct evidence from systematic characterizations of different samples. It is conclusive that growth of high-quality Ag nanoplates on GaAs wafers is ascribed to the good separation between nucleation and growth steps, which are driven by two different reduction pathways. At the nucleation step, fast reduction of Ag{sup +} ions with a high concentration of surface electrons is crucial for the formation of Ag nuclei with multiple (111) twin planes parallel to each other, and remaining the environment of a high concentration of surface electrons for a period long enough is also important to develop the Ag nuclei into stable seeds. At the growth step, a hole injection process is mainly responsible for reduction of Ag{sup +} ions to enlarge the stable seeds into Ag nanoplates with controlled sizes by tuning the growth time. The paralleled multiple (111) twin planes provide a crystalline confinement to guide the growth of the seeds into nanoplates.},
doi = {10.1021/jp909312g},
journal = {J. Phys. Chem. C.},
issn = {1932-7447},
number = 2 ; Jan. 21, 2010,
volume = 114,
place = {United States},
year = {2010},
month = {1}
}