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Title: Ferroelectric thin films grown on base-metal foils for embedded passives.

Abstract

Development of electronic devices with higher performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The 'film-on-foil' approach is the most viable method to fabricate suitable passive components. We have deposited high-permittivity thin films of ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) on base metal foils by chemical solution deposition. These capacitors could be embedded into PWBs. However, formation of a parasitic low-permittivity interfacial layer of nickel oxide during thermal processing of the PLZT films considerably reduces the capacitance density. Two approaches were taken to overcome the problem. In the first, a conductive buffer layer of lanthanum nickel oxide (LNO) was inserted between the PLZT film and the nickel foil to hinder the formation of deleterious interfacial oxide. In the second, high temperature processing was done under low oxygen partial pressure such that no interfacial oxide was formed. By these approaches, we have grown high-quality ferroelectric PLZT films on nickel and copper foils. With samples of PLZT grown on LNO-buffered Ni, we measured a dielectric constant of 1300 (at 25 C) and 1800 (at 150 C), leakage current density of 6.6 x 10{sup -9} A/cm{sup 2} (at 25 C) and 1.4more » x 10{sup -8} A/cm{sup 2} (at 150 C), and breakdown field strength >1.2 MV/cm.« less

Authors:
; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
EE
OSTI Identifier:
971959
Report Number(s):
ANL/ES/CP-60591
TRN: US201005%%4
DOE Contract Number:
DE-AC02-06CH11357
Resource Type:
Conference
Resource Relation:
Conference: 2007 MRS Fall Meeting; Nov. 26, 2007 - Nov. 30, 2007; Boston, MA
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; THIN FILMS; FERROELECTRIC MATERIALS; PRINTED CIRCUITS; FOILS; FABRICATION; PLZT; CHEMICAL COATING; CAPACITORS; NICKEL OXIDES; LANTHANUM OXIDES; BUFFERS; LEAKAGE CURRENT; CURRENT DENSITY; BREAKDOWN; CAPACITANCE

Citation Formats

Ma, B., Kwon, D. K., Narayanan, M., Balachandran, U., and Energy Systems. Ferroelectric thin films grown on base-metal foils for embedded passives.. United States: N. p., 2007. Web.
Ma, B., Kwon, D. K., Narayanan, M., Balachandran, U., & Energy Systems. Ferroelectric thin films grown on base-metal foils for embedded passives.. United States.
Ma, B., Kwon, D. K., Narayanan, M., Balachandran, U., and Energy Systems. Mon . "Ferroelectric thin films grown on base-metal foils for embedded passives.". United States. doi:.
@article{osti_971959,
title = {Ferroelectric thin films grown on base-metal foils for embedded passives.},
author = {Ma, B. and Kwon, D. K. and Narayanan, M. and Balachandran, U. and Energy Systems},
abstractNote = {Development of electronic devices with higher performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The 'film-on-foil' approach is the most viable method to fabricate suitable passive components. We have deposited high-permittivity thin films of ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) on base metal foils by chemical solution deposition. These capacitors could be embedded into PWBs. However, formation of a parasitic low-permittivity interfacial layer of nickel oxide during thermal processing of the PLZT films considerably reduces the capacitance density. Two approaches were taken to overcome the problem. In the first, a conductive buffer layer of lanthanum nickel oxide (LNO) was inserted between the PLZT film and the nickel foil to hinder the formation of deleterious interfacial oxide. In the second, high temperature processing was done under low oxygen partial pressure such that no interfacial oxide was formed. By these approaches, we have grown high-quality ferroelectric PLZT films on nickel and copper foils. With samples of PLZT grown on LNO-buffered Ni, we measured a dielectric constant of 1300 (at 25 C) and 1800 (at 150 C), leakage current density of 6.6 x 10{sup -9} A/cm{sup 2} (at 25 C) and 1.4 x 10{sup -8} A/cm{sup 2} (at 150 C), and breakdown field strength >1.2 MV/cm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}

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  • No abstract prepared.
  • An approach for embedding high-permittivity dielectric thin films into glass epoxy laminate packages has been developed. Lead lanthanum zirconate titanate (Pb{sub 0.85}La{sub 0.15}-(Zr{sub 0.52}Ti{sub 0.48}){sub 0.96}O{sub 3}, PLZT) thin films were prepared using chemical solution deposition on nickel-coated copper foils that were 50 {mu}m thick. Sputter-deposited nickel top electrodes completed the all-base-metal capacitor stack. After high-temperature nitrogen-gas crystallization anneals, the PLZT composition showed no signs of reduction, whereas the base-metal foils remained flexible. The capacitance density was 300-400 nF/cm2, and the loss tangent was 0.01-0.02 over a frequency range of 1-1000 kHz. These properties represent a potential improvement of 2-3more » orders of magnitude over currently available embedded capacitor technologies for polymeric packages.« less
  • We have grown ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on platinized silicon and LaNiO{sub 3}-buffered nickel substrates by chemical solution deposition using a sol-gel process based on acetic acid chemistry. The following measurements were obtained under zero-bias field: relative permittivity of {approx}960 and dielectric loss of {approx}0.04 on the PLZT film grown on Pt/Si substrates, and relative permittivity of {approx}820 and dielectric loss of {approx}0.06 on the PLZT film grown on LNO-buffered Ni substrates. In addition, a relative permittivity of 125 and dielectric loss of 0.02 were measured at room temperature under a high bias field ofmore » 1 x 10{sup 6} V/cm on PLZT deposited on LNO-buffered nickel substrate. Furthermore, a steady-state leakage current density of {approx}8.1 x 10{sup -9} A/cm{sup 2} and mean breakdown field strength of 1.7 x 10{sup 6} V/cm were measured at room temperature. Finally, remanent polarization (P{sub r}) of {approx} 2.0 x 10{sup -5} C/cm{sup 2}, coercive electric field (E{sub c}) of {approx}3.4 x 10{sup 4} V/cm, and energy density of {approx}45 J/cm{sup 3} were determined from room-temperature hysteresis loop measurements on PLZT/LNO/Ni film-on-foil capacitors with 250-{micro}m-diameter platinum top electrodes.« less
  • An approach for embedding high-K dielectric thin films into polymer packages has been developed. Pb{sub 0.85}La{sub 0.15}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.96}O{sub 3} thin films were prepared by chemical solution deposition on 50 {micro}m thick Ni-coated Cu foils. Sputter deposited Ni top electrodes completed the all base-metal capacitor stack. After high temperature N{sub 2} crystallization anneals, the PLZT composition showed reduction resistance while the base-metal foils remained flexible. Capacitance density and Loss tangent values range between 300 and 400 nF/cm{sup 2} and 0.01 and 0.02 from 1 to 1,000 kHz respectively. These properties represent a 2 to 3 order of magnitude improvementmore » over available embedded capacitor technologies for polymeric packages.« less
  • We have deposited Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on nickel and copper substrates to create film-on-foil capacitors that exhibit excellent dielectric properties and superior breakdown strength. Measurements with PLZT films on LaNiO{sub 3}-buffered Ni foils yielded the following: relative permittivity of 1300 (at 25 C) and 1800 (at 150 C), leakage current density of 6.6 x 10{sup -9} A/cm{sup 2} (at 25 C) and 1.4 x 10{sup -8} A/cm{sup 2} (at 150 C), and mean breakdown field strength {approx}2.5 MV/cm. With PLZT deposited directly on Cu foils, we observed dielectric constant {approx}1100, dielectric loss (tan {delta}) {approx}0.06,more » and leakage current density of 7.3 x 10{sup -9} A/cm{sup 2} when measured at room temperature.« less