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Title: Ferroelectric thin films grown on base-metal foils for embedded passives.

Abstract

Development of electronic devices with higher performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The 'film-on-foil' approach is the most viable method to fabricate suitable passive components. We have deposited high-permittivity thin films of ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) on base metal foils by chemical solution deposition. These capacitors could be embedded into PWBs. However, formation of a parasitic low-permittivity interfacial layer of nickel oxide during thermal processing of the PLZT films considerably reduces the capacitance density. Two approaches were taken to overcome the problem. In the first, a conductive buffer layer of lanthanum nickel oxide (LNO) was inserted between the PLZT film and the nickel foil to hinder the formation of deleterious interfacial oxide. In the second, high temperature processing was done under low oxygen partial pressure such that no interfacial oxide was formed. By these approaches, we have grown high-quality ferroelectric PLZT films on nickel and copper foils. With samples of PLZT grown on LNO-buffered Ni, we measured a dielectric constant of 1300 (at 25 C) and 1800 (at 150 C), leakage current density of 6.6 x 10{sup -9} A/cm{sup 2} (at 25 C) and 1.4more » x 10{sup -8} A/cm{sup 2} (at 150 C), and breakdown field strength >1.2 MV/cm.« less

Authors:
; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
EE
OSTI Identifier:
971959
Report Number(s):
ANL/ES/CP-60591
TRN: US201005%%4
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Conference
Resource Relation:
Conference: 2007 MRS Fall Meeting; Nov. 26, 2007 - Nov. 30, 2007; Boston, MA
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; THIN FILMS; FERROELECTRIC MATERIALS; PRINTED CIRCUITS; FOILS; FABRICATION; PLZT; CHEMICAL COATING; CAPACITORS; NICKEL OXIDES; LANTHANUM OXIDES; BUFFERS; LEAKAGE CURRENT; CURRENT DENSITY; BREAKDOWN; CAPACITANCE

Citation Formats

Ma, B., Kwon, D. K., Narayanan, M., Balachandran, U., and Energy Systems. Ferroelectric thin films grown on base-metal foils for embedded passives.. United States: N. p., 2007. Web.
Ma, B., Kwon, D. K., Narayanan, M., Balachandran, U., & Energy Systems. Ferroelectric thin films grown on base-metal foils for embedded passives.. United States.
Ma, B., Kwon, D. K., Narayanan, M., Balachandran, U., and Energy Systems. Mon . "Ferroelectric thin films grown on base-metal foils for embedded passives.". United States. doi:.
@article{osti_971959,
title = {Ferroelectric thin films grown on base-metal foils for embedded passives.},
author = {Ma, B. and Kwon, D. K. and Narayanan, M. and Balachandran, U. and Energy Systems},
abstractNote = {Development of electronic devices with higher performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The 'film-on-foil' approach is the most viable method to fabricate suitable passive components. We have deposited high-permittivity thin films of ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) on base metal foils by chemical solution deposition. These capacitors could be embedded into PWBs. However, formation of a parasitic low-permittivity interfacial layer of nickel oxide during thermal processing of the PLZT films considerably reduces the capacitance density. Two approaches were taken to overcome the problem. In the first, a conductive buffer layer of lanthanum nickel oxide (LNO) was inserted between the PLZT film and the nickel foil to hinder the formation of deleterious interfacial oxide. In the second, high temperature processing was done under low oxygen partial pressure such that no interfacial oxide was formed. By these approaches, we have grown high-quality ferroelectric PLZT films on nickel and copper foils. With samples of PLZT grown on LNO-buffered Ni, we measured a dielectric constant of 1300 (at 25 C) and 1800 (at 150 C), leakage current density of 6.6 x 10{sup -9} A/cm{sup 2} (at 25 C) and 1.4 x 10{sup -8} A/cm{sup 2} (at 150 C), and breakdown field strength >1.2 MV/cm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}

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