skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Solution synthesis of germanium nanocrystals

Abstract

A method for providing a route for the synthesis of a Ge(0) nanometer-sized material from. A Ge(II) precursor is dissolved in a ligand heated to a temperature, generally between approximately 100.degree. C. and 400.degree. C., sufficient to thermally reduce the Ge(II) to Ge(0), where the ligand is a compound that can bond to the surface of the germanium nanomaterials to subsequently prevent agglomeration of the nanomaterials. The ligand encapsulates the surface of the Ge(0) material to prevent agglomeration. The resulting solution is cooled for handling, with the cooling characteristics useful in controlling the size and size distribution of the Ge(0) materials. The characteristics of the Ge(II) precursor determine whether the Ge(0) materials that result will be nanocrystals or nanowires.

Inventors:
 [1];  [2];  [3]
  1. Albuquerque, NM
  2. Kensington, MD
  3. Cuyahoga Falls, OH
Publication Date:
Research Org.:
Sandia National Laboratories (SNL-NM), Albuquerque, NM
Sponsoring Org.:
USDOE
OSTI Identifier:
971621
Patent Number(s):
7,591,871
Application Number:
11/060,157
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Gerung, Henry, Boyle, Timothy J, and Bunge, Scott D. Solution synthesis of germanium nanocrystals. United States: N. p., 2009. Web.
Gerung, Henry, Boyle, Timothy J, & Bunge, Scott D. Solution synthesis of germanium nanocrystals. United States.
Gerung, Henry, Boyle, Timothy J, and Bunge, Scott D. Tue . "Solution synthesis of germanium nanocrystals". United States. https://www.osti.gov/servlets/purl/971621.
@article{osti_971621,
title = {Solution synthesis of germanium nanocrystals},
author = {Gerung, Henry and Boyle, Timothy J and Bunge, Scott D},
abstractNote = {A method for providing a route for the synthesis of a Ge(0) nanometer-sized material from. A Ge(II) precursor is dissolved in a ligand heated to a temperature, generally between approximately 100.degree. C. and 400.degree. C., sufficient to thermally reduce the Ge(II) to Ge(0), where the ligand is a compound that can bond to the surface of the germanium nanomaterials to subsequently prevent agglomeration of the nanomaterials. The ligand encapsulates the surface of the Ge(0) material to prevent agglomeration. The resulting solution is cooled for handling, with the cooling characteristics useful in controlling the size and size distribution of the Ge(0) materials. The characteristics of the Ge(II) precursor determine whether the Ge(0) materials that result will be nanocrystals or nanowires.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {9}
}

Patent:

Save / Share: