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Title: Novel Metal-Sulfur-Based Air-Stable Passivation of GaAs with Very Low Surface State Densities

Abstract

A new air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for >11 months with SiO{sub x}N{sub y} dielectric encapsulation. Photoluminescence and X-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for >2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
9714
Report Number(s):
SAND99-2078J
TRN: AH200125%%147
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Other Information: Submitted to Applied Physics Letters; PBD: 9 Aug 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AIR; DEPOSITION; DIELECTRIC MATERIALS; ENCAPSULATION; HETEROJUNCTIONS; PASSIVATION; PHOTOLUMINESCENCE; PLASMA; SULFUR; TRANSISTORS

Citation Formats

Ashby, Carol I.H., Baca, Albert G., Chang, P.-C, Hafich, M.J., Hammons, B.E., and Zavadil, Kevin R. Novel Metal-Sulfur-Based Air-Stable Passivation of GaAs with Very Low Surface State Densities. United States: N. p., 1999. Web. doi:10.1063/1.124280.
Ashby, Carol I.H., Baca, Albert G., Chang, P.-C, Hafich, M.J., Hammons, B.E., & Zavadil, Kevin R. Novel Metal-Sulfur-Based Air-Stable Passivation of GaAs with Very Low Surface State Densities. United States. doi:10.1063/1.124280.
Ashby, Carol I.H., Baca, Albert G., Chang, P.-C, Hafich, M.J., Hammons, B.E., and Zavadil, Kevin R. Mon . "Novel Metal-Sulfur-Based Air-Stable Passivation of GaAs with Very Low Surface State Densities". United States. doi:10.1063/1.124280. https://www.osti.gov/servlets/purl/9714.
@article{osti_9714,
title = {Novel Metal-Sulfur-Based Air-Stable Passivation of GaAs with Very Low Surface State Densities},
author = {Ashby, Carol I.H. and Baca, Albert G. and Chang, P.-C and Hafich, M.J. and Hammons, B.E. and Zavadil, Kevin R.},
abstractNote = {A new air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for >11 months with SiO{sub x}N{sub y} dielectric encapsulation. Photoluminescence and X-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for >2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices.},
doi = {10.1063/1.124280},
journal = {Applied Physics Letters},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {8}
}