Radiation-induced off-state leakage current in commercial power MOSFETs.

Dodd, Paul Emerson; Shaneyfelt, Marty Ray; Draper, Bruce Leroy; Felix, James Andrew; Schwank, James Ralph; Dalton, Scott Matthew

Title: Radiation-induced off-state leakage current in commercial power MOSFETs.

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Abstract

The total dose hardness of several commercial power MOSFET technologies is examined. After exposure to 20 krad(SiO{sub 2}) most of the n- and p-channel devices examined in this work show substantial (2 to 6 orders of magnitude) increases in off-state leakage current. For the n-channel devices, the increase in radiation-induced leakage current follows standard behavior for moderately thick gate oxides, i.e., the increase in leakage current is dominated by large negative threshold voltage shifts, which cause the transistor to be partially on even when no bias is applied to the gate electrode. N-channel devices biased during irradiation show a significantly larger leakage current increase than grounded devices. The increase in leakage current for the p-channel devices, however, was unexpected. For the p-channel devices, it is shown using electrical characterization and simulation that the radiation-induced leakage current increase is related to an increase in the reverse bias leakage characteristics of the gated diode which is formed by the drain epitaxial layer and the body. This mechanism does not significantly contribute to radiation-induced leakage current in typical p-channel MOS transistors. The p-channel leakage current increase is nearly identical for both biased and grounded irradiations and therefore has serious implications for long durationmore »« less

Authors:: Dodd, Paul Emerson; Shaneyfelt, Marty Ray; Draper, Bruce Leroy; Felix, James Andrew; Schwank, James Ralph; Dalton, Scott Matthew

Publication Date:: Fri Jul 01 00:00:00 EDT 2005

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 970711

Report Number(s):: SAND2005-4278J
TRN: US1000873

DOE Contract Number:: AC04-94AL85000

Resource Type:: Journal Article

Journal Name:: Proposed for publication in the IEEE Transactions on Nuclear Science.

Additional Journal Information:: Journal Name: Proposed for publication in the IEEE Transactions on Nuclear Science.

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; RADIATION HARDENING; LEAKAGE CURRENT; MOSFET; RADIATION DOSES; RADIATION EFFECTS

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                    Dodd, Paul Emerson, Shaneyfelt, Marty Ray, Draper, Bruce Leroy, Felix, James Andrew, Schwank, James Ralph, and Dalton, Scott Matthew. Radiation-induced off-state leakage current in commercial power MOSFETs..  United States: N. p., 2005. 
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                    Dodd, Paul Emerson, Shaneyfelt, Marty Ray, Draper, Bruce Leroy, Felix, James Andrew, Schwank, James Ralph, & Dalton, Scott Matthew. Radiation-induced off-state leakage current in commercial power MOSFETs..  United States.

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                    Dodd, Paul Emerson, Shaneyfelt, Marty Ray, Draper, Bruce Leroy, Felix, James Andrew, Schwank, James Ralph, and Dalton, Scott Matthew. 2005.  
        "Radiation-induced off-state leakage current in commercial power MOSFETs.".  United States.

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@article{osti_970711,

  title        = {Radiation-induced off-state leakage current in commercial power MOSFETs.},

  author       = {Dodd, Paul Emerson and Shaneyfelt, Marty Ray and Draper, Bruce Leroy and Felix, James Andrew and Schwank, James Ralph and Dalton, Scott Matthew},

  abstractNote = {The total dose hardness of several commercial power MOSFET technologies is examined. After exposure to 20 krad(SiO{sub 2}) most of the n- and p-channel devices examined in this work show substantial (2 to 6 orders of magnitude) increases in off-state leakage current. For the n-channel devices, the increase in radiation-induced leakage current follows standard behavior for moderately thick gate oxides, i.e., the increase in leakage current is dominated by large negative threshold voltage shifts, which cause the transistor to be partially on even when no bias is applied to the gate electrode. N-channel devices biased during irradiation show a significantly larger leakage current increase than grounded devices. The increase in leakage current for the p-channel devices, however, was unexpected. For the p-channel devices, it is shown using electrical characterization and simulation that the radiation-induced leakage current increase is related to an increase in the reverse bias leakage characteristics of the gated diode which is formed by the drain epitaxial layer and the body. This mechanism does not significantly contribute to radiation-induced leakage current in typical p-channel MOS transistors. The p-channel leakage current increase is nearly identical for both biased and grounded irradiations and therefore has serious implications for long duration missions since even devices which are usually powered off could show significant degradation and potentially fail.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/970711},
  journal      = {Proposed for publication in the IEEE Transactions on Nuclear Science.},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Fri Jul 01 00:00:00 EDT 2005},

  month        = {Fri Jul 01 00:00:00 EDT 2005}

}

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