Enhanced flux pinning in MOCVD-YBCO films through Zr-additions:Systematic feasibility studies
- ORNL
- Argonne National Laboratory (ANL)
Systematic effects of Zr additions on the structural and flux pinning properties of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) films deposited by metal-organic chemical vapor deposition (MOCVD) have been investigated. Detailed characterization, conducted by coordinated transport, x-ray diffraction, scanning and transmission electron microscopy analyses, and imaging Raman microscopy have revealed trends in the resulting property/performance correlations of these films with respect to varying mole percentages (mol%) of added Zr. For compositions {le} 7.5 mol%, Zr additions lead to improved in-field critical current density, as well as extra correlated pinning along the c-axis direction of the YBCO films via the formation of columnar, self-assembled stacks of BaZrO{sub 3} nanodots.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- OE USDOE - Office of Electric Transmission and Distribution
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 969773
- Journal Information:
- Superconductor Science & Technology, Vol. 23, Issue 014005; ISSN 0953-2048
- Country of Publication:
- United States
- Language:
- English
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