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Title: Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates.

Abstract

We have grown ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on Hastelloy C276 (HC) substrates by chemical solution deposition. Samples of 1.15-{micro}m-thick PLZT films were prepared on HC with and without lanthanum nickel oxide (LNO) films as an intermediate buffer layer. On samples with and without LNO buffers at room temperature, we measured dielectric constants of {approx}1,300 and {approx}450 and loss tangents of {approx}0.06 and {approx}0.07, respectively. For PLZT films grown on HC with LNO buffer, the dielectric constant increases, while the dielectric loss decreases, with increasing temperature. A dielectric constant of {approx}2,000 and loss of {approx}0.05 were observed at 150 C. Samples with LNO buffer also exhibited slimmer hysteresis loops and lower leakage current density when compared to samples without LNO buffer. The following results were measured on samples with and without LNO buffers: remanent polarization (P{sub r}) values of 21.3 and 36.4 {micro}C/cm{sup 2}, coercive electric field (E{sub c}) values of 41 and 173 kV/cm, and leakage current densities of {approx}1.1 x 10{sup -8} and {approx}1.6 x 10{sup -7} A/cm{sup 2}, respectively. The energy storage capability was measured at {approx}65 J/cm{sup 3} for the PLZT film-on-foil capacitor deposited on HC with LNO buffer.

Authors:
; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
EE
OSTI Identifier:
969631
Report Number(s):
ANL/ES/JA-65023
Journal ID: ISSN 0022-2461; JMTSAS; TRN: US201001%%861
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
J. Mater. Sci.
Additional Journal Information:
Journal Volume: 45; Journal Issue: 2010; Journal ID: ISSN 0022-2461
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; BUFFERS; CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ENERGY STORAGE; FABRICATION; HASTELLOYS; HYSTERESIS; LANTHANUM; LEAKAGE CURRENT; NICKEL OXIDES; PERMITTIVITY; POLARIZATION; SUBSTRATES

Citation Formats

Ma, B, Narayanan, M, Tong, S, Balachandran, U, and Energy Systems. Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates.. United States: N. p., 2010. Web. doi:10.1007/s10853-009-3910-0.
Ma, B, Narayanan, M, Tong, S, Balachandran, U, & Energy Systems. Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates.. United States. https://doi.org/10.1007/s10853-009-3910-0
Ma, B, Narayanan, M, Tong, S, Balachandran, U, and Energy Systems. Fri . "Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates.". United States. https://doi.org/10.1007/s10853-009-3910-0.
@article{osti_969631,
title = {Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates.},
author = {Ma, B and Narayanan, M and Tong, S and Balachandran, U and Energy Systems},
abstractNote = {We have grown ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on Hastelloy C276 (HC) substrates by chemical solution deposition. Samples of 1.15-{micro}m-thick PLZT films were prepared on HC with and without lanthanum nickel oxide (LNO) films as an intermediate buffer layer. On samples with and without LNO buffers at room temperature, we measured dielectric constants of {approx}1,300 and {approx}450 and loss tangents of {approx}0.06 and {approx}0.07, respectively. For PLZT films grown on HC with LNO buffer, the dielectric constant increases, while the dielectric loss decreases, with increasing temperature. A dielectric constant of {approx}2,000 and loss of {approx}0.05 were observed at 150 C. Samples with LNO buffer also exhibited slimmer hysteresis loops and lower leakage current density when compared to samples without LNO buffer. The following results were measured on samples with and without LNO buffers: remanent polarization (P{sub r}) values of 21.3 and 36.4 {micro}C/cm{sup 2}, coercive electric field (E{sub c}) values of 41 and 173 kV/cm, and leakage current densities of {approx}1.1 x 10{sup -8} and {approx}1.6 x 10{sup -7} A/cm{sup 2}, respectively. The energy storage capability was measured at {approx}65 J/cm{sup 3} for the PLZT film-on-foil capacitor deposited on HC with LNO buffer.},
doi = {10.1007/s10853-009-3910-0},
url = {https://www.osti.gov/biblio/969631}, journal = {J. Mater. Sci.},
issn = {0022-2461},
number = 2010,
volume = 45,
place = {United States},
year = {2010},
month = {1}
}