GaTe semiconductor for radiation detection
Patent
·
OSTI ID:968975
- Castro Valley, CA
- Nashville, TN
- Ashland, MA
GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- Sponsoring Organization:
- United States Department of Energy
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Number(s):
- 7,550,735
- Application Number:
- 11/824,094
- OSTI ID:
- 968975
- Country of Publication:
- United States
- Language:
- English
Deep level transient spectroscopy of anisotropic semiconductor GaTe
|
journal | August 1994 |
Anharmonicity in GaTe layered crystals
|
journal | December 2002 |
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