First-principles study of defects and carrier compensation in semiconductor radiation detector materials

Conference · Thu Jan 01 00:00:00 EST 2009

OSTI ID:968286

Du, Mao-Hua ^[1]; Takenaka, Hiroyuki ^[1]; Singh, David J ^[1]

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1. ORNL

We discuss defect engineering strategies in radiation detector materials. The goal is to increase resistivity by defect-induced Fermi level pinning without causing defect-induced reductions in the carrier drifting length. We show calculated properties of various intrinsic defects and impurities in CdTe. We suggest that the defect complex of a hydrogen atom and an isovalent impurity on an anion site may be an excellent candidate in many semiconductors for Fermi level pinning without carrier trapping.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 968286
• Resource Relation: Conference: MRS Spring Meeting, San Francisco, CA, USA, 20090413, 20090417
• Country of Publication: United States
• Language: English

Related Subjects

08 HYDROGEN
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANIONS
ATOMS
DEFECTS
FERMI LEVEL
HYDROGEN
IMPURITIES
RADIATION DETECTORS
TRAPPING