19.5%-Efficient CuIn1-xGaxSe2 Photovoltaic Cells Using A Cd-Zn-S Buffer Layer
CuIn1-xGaxSe2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) Zn1-xCdxS (CdZnS), ZnS, and CdS buffer layers are discussed. A 19.52%-efficient, CIGS-based, thin-film photovoltaic device has been fabricated using a single-layer CBD CdZnS buffer layer. The mechanism that creates extensive hydroxide and oxide impurities in CBD-ZnS and CBD-CdZnS thin films (compared to CBD-CdS thin film) is presented.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 968188
- Resource Relation:
- Conference: ECS Transactions; [Proceedings] Fundamentals of Energy Storage and Conversion: 213th Meeting of the Electrochemical Society, 18-23 May 2008, Phoenix, Arizona
- Country of Publication:
- United States
- Language:
- English
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