Highly-Efficient Laser with Self-Aligned Waveguide and Current Confinement by Selective Oxidation
We report highly efficient, low-threshold-current edge-emitting lasers where both the optical waveguide and lateral current confinement are achieved by lateral selective oxidation of AlGaAs. External differential quantum efficiency in excess of 95% and 40% wall-plug efficiency are demonstrated in 600 {micro}m-long devices without facet coatings. Shorter, 300-{micro}m-long, uncoated devices have <6 mA threshold currents. This high-performance is a combined result of placement of the oxide layers so as to achieve the minimum optical mode volume and bi-parabolic grading of the Al{sub x}Ga{sub 1{minus}x}As heteroepitaxy for minimum height/potential barriers, less than 15 meV, created by the wide-energy-gap layers required for selective wet oxidation. Since the initial development of wet AlGaAs oxidation methods, a number of oxidized edge-emitting laser concepts have been tried. The most successful of these have used lateral selective oxidation of AlGaAs layers between 100 and 300 nm thickness. These layers have been used as current restricting apertures or for both current restriction and lateral waveguiding. Use of an oxide layer above and below the laser active region offers the ability to create a self-aligned waveguide with current apertures on both sides of the pn-junction in a process requiring only one epitaxial growth step. Previous use apertures for these dual purposes resulted multi-moded lasers with reduced efficiency and elevated threshold current density due to non-ideal formation of the waveguide and possibly excess stress caused by the thick (300 nm) oxide layer.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 9673
- Report Number(s):
- SAND99-1967C; TRN: AH200124%%367
- Resource Relation:
- Conference: LEOS'99 Annual Meeting, San Francisco, CA (US), 11/08/1999--11/11/1999; Other Information: PBD: 27 Jul 1999
- Country of Publication:
- United States
- Language:
- English
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