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Title: Solution Processed Lanthanum Zirconium Oxide as a Primary Barrier Layer for High Ic Coated Conductors

Abstract

High-quality lanthanum zirconium oxide (La{sub 2}Zr{sub 2}O{sub 7} or LZO) films have been deposited and processed on Ni-W substrates using a sol-gel processing approach. It has been demonstrated that crack-free coatings with thicknesses up to 100 nm can be processed in a single step, while thicker coatings (200-225 nm) were processed using a multiple coating and annealing process. Using simulated metalorganic deposition (MOD)-YBa{sub 2}Cu{sub 3}O{sub 7-:{angstrom}} (YBCO) processing conditions, the barrier properties of the sol-gel LZO coating with a thickness of 120 nm were found to be comparable to that of the standard 3-layer buffer stack deposited using physical vapor deposition. Secondary ion mass spectroscopy depth profile analysis of LZO films annealed in oxygen-18 shows that LZO effectively stops the diffusion of Ni within the first 80-100 nm. Using MOD processes, a CeO{sub 2} cap layer and superconducting YBCO layer were deposited on sol-gel LZO/Ni-W. For the first time, using such an all-solution conductor architecture, a critical current (I{sub c}) of 140 A/cm with a corresponding critical current density (J{sub c}) of 1.75 MA/cm{sup 2} has been demonstrated. Using a very thin Y{sub 2}O{sub 3} seed layer ({approx}10 nm) deposited by electron beam evaporation; improved texture quality in the LZOmore » layers has been demonstrated. The performance of the LZO deposited on these samples was evaluated using a sputtered CeO{sub 2} cap layer and MOD YBCO layer. Critical currents of up to 255 A/cm (3.2 MA/cm{sup 2}) with 0.8-{micro}m-thick YBCO films have been demonstrated, comparable to the performance of films grown using physical vapor deposited yttria stabilized zirconia as a barrier layer. Similar experiments using an MOD-CeO{sub 2} cap layer and MOD-YBCO layer yielded critical currents of 200 A/cm (2.5 MA/cm{sup 2}) with 0.8-{micro}m-thick YBCO films.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2]
  1. ORNL
  2. American Superconductor Corporation, Westborough, MA
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
OE USDOE - Office of Electric Transmission and Distribution
OSTI Identifier:
965814
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 21; Journal Issue: 4; Journal ID: ISSN 0884-2914
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; LANTHANUM OXIDES; ZIRCONIUM OXIDES; SOL-GEL PROCESS; SUBSTRATES; NICKEL; TUNGSTEN; COATINGS; THICKNESS; CERIUM OXIDES; YTTRIUM OXIDES; BARIUM OXIDES; COPPER OXIDES; CRITICAL CURRENT; CURRENT DENSITY; SUPERCONDUCTIVITY; MATERIALS TESTING

Citation Formats

Sathyamurthy, Srivatsan, Paranthaman, Mariappan Parans, Heatherly, Jr, Lee, Martin, Patrick M, Specht, Eliot D, Goyal, Amit, Kodenkandath, Thomas, Li, Xiaoping, and Rupich, Marty. Solution Processed Lanthanum Zirconium Oxide as a Primary Barrier Layer for High Ic Coated Conductors. United States: N. p., 2006. Web. doi:10.1557/jmr.2006.0112.
Sathyamurthy, Srivatsan, Paranthaman, Mariappan Parans, Heatherly, Jr, Lee, Martin, Patrick M, Specht, Eliot D, Goyal, Amit, Kodenkandath, Thomas, Li, Xiaoping, & Rupich, Marty. Solution Processed Lanthanum Zirconium Oxide as a Primary Barrier Layer for High Ic Coated Conductors. United States. https://doi.org/10.1557/jmr.2006.0112
Sathyamurthy, Srivatsan, Paranthaman, Mariappan Parans, Heatherly, Jr, Lee, Martin, Patrick M, Specht, Eliot D, Goyal, Amit, Kodenkandath, Thomas, Li, Xiaoping, and Rupich, Marty. Sun . "Solution Processed Lanthanum Zirconium Oxide as a Primary Barrier Layer for High Ic Coated Conductors". United States. https://doi.org/10.1557/jmr.2006.0112.
@article{osti_965814,
title = {Solution Processed Lanthanum Zirconium Oxide as a Primary Barrier Layer for High Ic Coated Conductors},
author = {Sathyamurthy, Srivatsan and Paranthaman, Mariappan Parans and Heatherly, Jr, Lee and Martin, Patrick M and Specht, Eliot D and Goyal, Amit and Kodenkandath, Thomas and Li, Xiaoping and Rupich, Marty},
abstractNote = {High-quality lanthanum zirconium oxide (La{sub 2}Zr{sub 2}O{sub 7} or LZO) films have been deposited and processed on Ni-W substrates using a sol-gel processing approach. It has been demonstrated that crack-free coatings with thicknesses up to 100 nm can be processed in a single step, while thicker coatings (200-225 nm) were processed using a multiple coating and annealing process. Using simulated metalorganic deposition (MOD)-YBa{sub 2}Cu{sub 3}O{sub 7-:{angstrom}} (YBCO) processing conditions, the barrier properties of the sol-gel LZO coating with a thickness of 120 nm were found to be comparable to that of the standard 3-layer buffer stack deposited using physical vapor deposition. Secondary ion mass spectroscopy depth profile analysis of LZO films annealed in oxygen-18 shows that LZO effectively stops the diffusion of Ni within the first 80-100 nm. Using MOD processes, a CeO{sub 2} cap layer and superconducting YBCO layer were deposited on sol-gel LZO/Ni-W. For the first time, using such an all-solution conductor architecture, a critical current (I{sub c}) of 140 A/cm with a corresponding critical current density (J{sub c}) of 1.75 MA/cm{sup 2} has been demonstrated. Using a very thin Y{sub 2}O{sub 3} seed layer ({approx}10 nm) deposited by electron beam evaporation; improved texture quality in the LZO layers has been demonstrated. The performance of the LZO deposited on these samples was evaluated using a sputtered CeO{sub 2} cap layer and MOD YBCO layer. Critical currents of up to 255 A/cm (3.2 MA/cm{sup 2}) with 0.8-{micro}m-thick YBCO films have been demonstrated, comparable to the performance of films grown using physical vapor deposited yttria stabilized zirconia as a barrier layer. Similar experiments using an MOD-CeO{sub 2} cap layer and MOD-YBCO layer yielded critical currents of 200 A/cm (2.5 MA/cm{sup 2}) with 0.8-{micro}m-thick YBCO films.},
doi = {10.1557/jmr.2006.0112},
url = {https://www.osti.gov/biblio/965814}, journal = {Journal of Materials Research},
issn = {0884-2914},
number = 4,
volume = 21,
place = {United States},
year = {2006},
month = {1}
}