Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon
Journal Article
·
· Semiconductor Science and Technology
OSTI ID:965794
We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual 29Si nuclear spin bath, making isotopically enriched nuclear spin-free 28Si substrates a promising candidate for forming spin quantum bit devices. The FinFET architecture is fully compatible with single-ion implant detection for donor-based qubits, and the donor spin-state readout through electrical detection of spin resonance. We describe device processing steps and discuss results on electrical transport measurements at 0.3 K.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Accelerator& Fusion Research Division
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 965794
- Report Number(s):
- LBNL-2204E; SSTEET; TRN: US200919%%731
- Journal Information:
- Semiconductor Science and Technology, Journal Name: Semiconductor Science and Technology; ISSN 0268-1242
- Country of Publication:
- United States
- Language:
- English
Similar Records
All-electric control of donor nuclear spin qubits in silicon.
Stark shift and field ionization of arsenic donors in {sup 28}Si-silicon-on-insulator structures
Silicon quantum processor with robust long-distance qubit couplings
Journal Article
·
Sun Oct 01 00:00:00 EDT 2017
· Nature Nanotechnology
·
OSTI ID:965794
+2 more
Stark shift and field ionization of arsenic donors in {sup 28}Si-silicon-on-insulator structures
Journal Article
·
Mon May 12 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:965794
+7 more
Silicon quantum processor with robust long-distance qubit couplings
Journal Article
·
Wed Sep 06 00:00:00 EDT 2017
· Nature Communications
·
OSTI ID:965794
+4 more