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Title: Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography

Abstract

As critical dimensions for leading-edge semiconductor devices shrink, line-edge roughness (LER) requirements are pushing well into the single digit nanometer regime. At these scales many new sources of LER must be considered. In the case of extreme ultraviolet (EUV) lithography, modeling has shown the lithographic mask to be a source of significant concern. Here we present a correlation-based methodology for experimentally measuring the magnitude of mask contributors to printed LER. The method is applied to recent printing results from a 0.3 numerical aperture EUV microfield exposure tool. The measurements demonstrate that such effects are indeed present and of significant magnitude. The method is also used to explore the effects of illumination coherence and defocus and has been used to verify model-based predictions of mask-induced LER.

Authors:
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
Materials Sciences Division
OSTI Identifier:
962220
Report Number(s):
LBNL-1977E
Journal ID: ISSN 0003-6935; APOPAI; TRN: US200915%%428
DOE Contract Number:  
DE-AC02-05CH11231
Resource Type:
Journal Article
Journal Name:
Applied Optics
Additional Journal Information:
Journal Name: Applied Optics; Journal ID: ISSN 0003-6935
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; APERTURES; DIMENSIONS; ILLUMINANCE; ROUGHNESS; SEMICONDUCTOR DEVICES; SIMULATION; Extreme ultraviolet lithography

Citation Formats

Naulleau, Patrick. Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography. United States: N. p., 2009. Web. doi:10.1364/AO.48.003302.
Naulleau, Patrick. Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography. United States. https://doi.org/10.1364/AO.48.003302
Naulleau, Patrick. 2009. "Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography". United States. https://doi.org/10.1364/AO.48.003302. https://www.osti.gov/servlets/purl/962220.
@article{osti_962220,
title = {Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography},
author = {Naulleau, Patrick},
abstractNote = {As critical dimensions for leading-edge semiconductor devices shrink, line-edge roughness (LER) requirements are pushing well into the single digit nanometer regime. At these scales many new sources of LER must be considered. In the case of extreme ultraviolet (EUV) lithography, modeling has shown the lithographic mask to be a source of significant concern. Here we present a correlation-based methodology for experimentally measuring the magnitude of mask contributors to printed LER. The method is applied to recent printing results from a 0.3 numerical aperture EUV microfield exposure tool. The measurements demonstrate that such effects are indeed present and of significant magnitude. The method is also used to explore the effects of illumination coherence and defocus and has been used to verify model-based predictions of mask-induced LER.},
doi = {10.1364/AO.48.003302},
url = {https://www.osti.gov/biblio/962220}, journal = {Applied Optics},
issn = {0003-6935},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {5}
}