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Title: Growth of V2O3 Thin Films on a-plane (110) and c-plane (001) Sapphire via Pulsed Deposition

Abstract

We report the direct deposition of epitaxial 215-nm-thick vanadium sesquioxide (V2O3) films on a- and c-plane sapphire substrates from powder-pressed V2O3 targets via pulsed-laser deposition (PLD) in an evacuated deposition chamber devoid of O2. The films were characterized using x-ray diffraction (XRD), x-ray photoemission spectroscopy (XPS), x-ray absorption fine structure (XAFS) spectroscopy, and atomic force microscopy (AFM). XPS measurements confirmed that the stoichiometry of the powder was conserved in the films. XRD patterns together with XAFS measurements proved that V2O3 was epitaxial on the a-sapphire substrate with epitaxial relation (110)film//(110)substrate, and the results are consistent with the epitaxy on the c-plane substrate as well. The room-temperature resistivities of V2O3 films on a- and c-plane substrates were 1.49 x 10-4 and 3.00 x 10-5 O m, respectively. The higher resistivities of the films compared to bulk V2O3 might be attributed to thermal stresses resulting from difference in thermal expansion coefficients (TECs) of the films and the substrates.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
959898
Report Number(s):
BNL-82884-2009-JA
Journal ID: ISSN 0884-2914; JMREEE; TRN: US1005826
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 22; Journal Issue: 10; Journal ID: ISSN 0884-2914
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ATOMIC FORCE MICROSCOPY; DEPOSITION; EPITAXY; FINE STRUCTURE; PHOTOEMISSION; SAPPHIRE; SPECTROSCOPY; STOICHIOMETRY; SUBSTRATES; TARGETS; THERMAL EXPANSION; THERMAL STRESSES; THIN FILMS; VANADIUM; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; national synchrotron light source

Citation Formats

Allimi, B, Alpay, S, Goberman, D, Huang, T, Budnick, J, Pease, D, and Frenkel, A. Growth of V2O3 Thin Films on a-plane (110) and c-plane (001) Sapphire via Pulsed Deposition. United States: N. p., 2007. Web. doi:10.1557/jmr.2007.0378.
Allimi, B, Alpay, S, Goberman, D, Huang, T, Budnick, J, Pease, D, & Frenkel, A. Growth of V2O3 Thin Films on a-plane (110) and c-plane (001) Sapphire via Pulsed Deposition. United States. https://doi.org/10.1557/jmr.2007.0378
Allimi, B, Alpay, S, Goberman, D, Huang, T, Budnick, J, Pease, D, and Frenkel, A. 2007. "Growth of V2O3 Thin Films on a-plane (110) and c-plane (001) Sapphire via Pulsed Deposition". United States. https://doi.org/10.1557/jmr.2007.0378.
@article{osti_959898,
title = {Growth of V2O3 Thin Films on a-plane (110) and c-plane (001) Sapphire via Pulsed Deposition},
author = {Allimi, B and Alpay, S and Goberman, D and Huang, T and Budnick, J and Pease, D and Frenkel, A},
abstractNote = {We report the direct deposition of epitaxial 215-nm-thick vanadium sesquioxide (V2O3) films on a- and c-plane sapphire substrates from powder-pressed V2O3 targets via pulsed-laser deposition (PLD) in an evacuated deposition chamber devoid of O2. The films were characterized using x-ray diffraction (XRD), x-ray photoemission spectroscopy (XPS), x-ray absorption fine structure (XAFS) spectroscopy, and atomic force microscopy (AFM). XPS measurements confirmed that the stoichiometry of the powder was conserved in the films. XRD patterns together with XAFS measurements proved that V2O3 was epitaxial on the a-sapphire substrate with epitaxial relation (110)film//(110)substrate, and the results are consistent with the epitaxy on the c-plane substrate as well. The room-temperature resistivities of V2O3 films on a- and c-plane substrates were 1.49 x 10-4 and 3.00 x 10-5 O m, respectively. The higher resistivities of the films compared to bulk V2O3 might be attributed to thermal stresses resulting from difference in thermal expansion coefficients (TECs) of the films and the substrates.},
doi = {10.1557/jmr.2007.0378},
url = {https://www.osti.gov/biblio/959898}, journal = {Journal of Materials Research},
issn = {0884-2914},
number = 10,
volume = 22,
place = {United States},
year = {2007},
month = {1}
}