skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Mapping Local Strain in Thin Film/Substrate Systems using X-ray

Abstract

The authors report experimental data and modeling results for reflection microbeam x-ray topographs from a Si substrate strained by an overlying pseudomorphic SiGe film edge. The diffracted x-ray intensity from the Si substrate is strongly asymmetric as a function of distance from the film edge. A model of the diffracted intensity based on the classical Ewald-von Laue dynamical diffraction theory for an antisymmetric strain distribution indicates that the asymmetry in the diffracted beam profile is only due to the scattering process; individual intensity maxima in the intensity profile cannot be uniquely ascribed to individual features in the local strain distribution.

Authors:
; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
959622
Report Number(s):
BNL-82608-2009-JA
Journal ID: ISSN 0003-6951; APPLAB; TRN: US201016%%766
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ASYMMETRY; BEAM PROFILES; DIFFRACTION; DISTRIBUTION; REFLECTION; SCATTERING; SIMULATION; STRAINS; SUBSTRATES; national synchrotron light source

Citation Formats

Yan,H., Murray, C., and Noyan, I.. Mapping Local Strain in Thin Film/Substrate Systems using X-ray. United States: N. p., 2007. Web. doi:10.1063/1.2711189.
Yan,H., Murray, C., & Noyan, I.. Mapping Local Strain in Thin Film/Substrate Systems using X-ray. United States. doi:10.1063/1.2711189.
Yan,H., Murray, C., and Noyan, I.. Mon . "Mapping Local Strain in Thin Film/Substrate Systems using X-ray". United States. doi:10.1063/1.2711189.
@article{osti_959622,
title = {Mapping Local Strain in Thin Film/Substrate Systems using X-ray},
author = {Yan,H. and Murray, C. and Noyan, I.},
abstractNote = {The authors report experimental data and modeling results for reflection microbeam x-ray topographs from a Si substrate strained by an overlying pseudomorphic SiGe film edge. The diffracted x-ray intensity from the Si substrate is strongly asymmetric as a function of distance from the film edge. A model of the diffracted intensity based on the classical Ewald-von Laue dynamical diffraction theory for an antisymmetric strain distribution indicates that the asymmetry in the diffracted beam profile is only due to the scattering process; individual intensity maxima in the intensity profile cannot be uniquely ascribed to individual features in the local strain distribution.},
doi = {10.1063/1.2711189},
journal = {Applied Physics Letters},
number = ,
volume = 90,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}