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Title: Mapping Local Strain in Thin Film/Substrate Systems using X-ray

Abstract

The authors report experimental data and modeling results for reflection microbeam x-ray topographs from a Si substrate strained by an overlying pseudomorphic SiGe film edge. The diffracted x-ray intensity from the Si substrate is strongly asymmetric as a function of distance from the film edge. A model of the diffracted intensity based on the classical Ewald-von Laue dynamical diffraction theory for an antisymmetric strain distribution indicates that the asymmetry in the diffracted beam profile is only due to the scattering process; individual intensity maxima in the intensity profile cannot be uniquely ascribed to individual features in the local strain distribution.

Authors:
; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
959622
Report Number(s):
BNL-82608-2009-JA
Journal ID: ISSN 0003-6951; APPLAB; TRN: US201016%%766
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 90; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ASYMMETRY; BEAM PROFILES; DIFFRACTION; DISTRIBUTION; REFLECTION; SCATTERING; SIMULATION; STRAINS; SUBSTRATES; national synchrotron light source

Citation Formats

Yan, H, Murray, C, and Noyan, I. Mapping Local Strain in Thin Film/Substrate Systems using X-ray. United States: N. p., 2007. Web. doi:10.1063/1.2711189.
Yan, H, Murray, C, & Noyan, I. Mapping Local Strain in Thin Film/Substrate Systems using X-ray. United States. https://doi.org/10.1063/1.2711189
Yan, H, Murray, C, and Noyan, I. 2007. "Mapping Local Strain in Thin Film/Substrate Systems using X-ray". United States. https://doi.org/10.1063/1.2711189.
@article{osti_959622,
title = {Mapping Local Strain in Thin Film/Substrate Systems using X-ray},
author = {Yan, H and Murray, C and Noyan, I},
abstractNote = {The authors report experimental data and modeling results for reflection microbeam x-ray topographs from a Si substrate strained by an overlying pseudomorphic SiGe film edge. The diffracted x-ray intensity from the Si substrate is strongly asymmetric as a function of distance from the film edge. A model of the diffracted intensity based on the classical Ewald-von Laue dynamical diffraction theory for an antisymmetric strain distribution indicates that the asymmetry in the diffracted beam profile is only due to the scattering process; individual intensity maxima in the intensity profile cannot be uniquely ascribed to individual features in the local strain distribution.},
doi = {10.1063/1.2711189},
url = {https://www.osti.gov/biblio/959622}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = ,
volume = 90,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}