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Title: Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells

Abstract

The structural and optical properties of GaSbN single quantum wells grown on GaSb substrates by solid source molecular beam epitaxy have been investigated for N concentrations up to 1.5%. The presence of well resolved and pronounced Pendellosung fringes, dynamical diffraction rods seen in the corresponding reciprocal space map, and triple axis full width at half maximum of 10-11 arcsec of the substrate and epilayer peak indicates epilayers of excellent quality with smooth interfaces. Low temperature photoluminescence (PL) exhibited sharp and discrete N related PL line features below the GaSb band edge. Their dependence on N concentration as well as measurement temperature and excitation intensity of the PL strongly suggests that these lines correspond to highly localized N pair/cluster states. No significant effect of in-situ annealing in Sb ambient on the PL features was observed, while ex-situ annealing in N ambient led to the annihilation of these features.

Authors:
 [1]
  1. North Carolina A&T State University
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Center for Nanophase Materials Sciences
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
958775
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 101; Journal Issue: 11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ANNIHILATION; DIFFRACTION; EXCITATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; SUBSTRATES

Citation Formats

Iyer, Prof Shanthi. Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells. United States: N. p., 2007. Web. doi:10.1063/1.2734081.
Iyer, Prof Shanthi. Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells. United States. doi:10.1063/1.2734081.
Iyer, Prof Shanthi. Mon . "Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells". United States. doi:10.1063/1.2734081.
@article{osti_958775,
title = {Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells},
author = {Iyer, Prof Shanthi},
abstractNote = {The structural and optical properties of GaSbN single quantum wells grown on GaSb substrates by solid source molecular beam epitaxy have been investigated for N concentrations up to 1.5%. The presence of well resolved and pronounced Pendellosung fringes, dynamical diffraction rods seen in the corresponding reciprocal space map, and triple axis full width at half maximum of 10-11 arcsec of the substrate and epilayer peak indicates epilayers of excellent quality with smooth interfaces. Low temperature photoluminescence (PL) exhibited sharp and discrete N related PL line features below the GaSb band edge. Their dependence on N concentration as well as measurement temperature and excitation intensity of the PL strongly suggests that these lines correspond to highly localized N pair/cluster states. No significant effect of in-situ annealing in Sb ambient on the PL features was observed, while ex-situ annealing in N ambient led to the annihilation of these features.},
doi = {10.1063/1.2734081},
journal = {Journal of Applied Physics},
number = 11,
volume = 101,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}