Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells
- North Carolina A&T State University
The structural and optical properties of GaSbN single quantum wells grown on GaSb substrates by solid source molecular beam epitaxy have been investigated for N concentrations up to 1.5%. The presence of well resolved and pronounced Pendellosung fringes, dynamical diffraction rods seen in the corresponding reciprocal space map, and triple axis full width at half maximum of 10-11 arcsec of the substrate and epilayer peak indicates epilayers of excellent quality with smooth interfaces. Low temperature photoluminescence (PL) exhibited sharp and discrete N related PL line features below the GaSb band edge. Their dependence on N concentration as well as measurement temperature and excitation intensity of the PL strongly suggests that these lines correspond to highly localized N pair/cluster states. No significant effect of in-situ annealing in Sb ambient on the PL features was observed, while ex-situ annealing in N ambient led to the annihilation of these features.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 958775
- Journal Information:
- Journal of Applied Physics, Vol. 101, Issue 11; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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