skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Anisotropy of disorder accumulation and recovery in 6H-SiC irradiated with Au2+ ions at 140 K

Abstract

Single crystal <0001>-oriented 6H-SiC was irradiated with Au2+ ions to fluences of 0.032, 0.058 and 0.105 ions/nm2 at 140 K and was subsequently annealed at various temperatures up to 500 K. The relative disorder on both the Si and C sublattices has been determined simultaneously using in-situ D+ ion channeling along the <0001> and <2-201> axes. A higher level of disorder on both the Si and C sublattices is observed along the <2-201>. There is a preferential C disordering and more C interstitials are aligned with <0001>. Room-temperature recovery along <2-201> occurs, which is associated with the <0001>-aligned interstitials that annihilate due to close-pair recombination. Disorder recovery between 400 and 500 K is primarily attributed to annihilation of interstitials that are misaligned with <0001>. Effects of stacking order in SiC on disorder accumulation are insignificant; however, noticeable differences of low-temperature recovery in Au2+-irradiated 6H-SiC and 4H-SiC are observed.

Authors:
;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
958003
Report Number(s):
PNNL-SA-60210
Journal ID: ISSN 0022-3115; JNUMAM; 19841; KC0201020; TRN: US1005616
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Journal of Nuclear Materials, 389(2):332-335
Additional Journal Information:
Journal Volume: 389; Journal Issue: 2; Journal ID: ISSN 0022-3115
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; ANISOTROPY; ANNIHILATION; INTERSTITIALS; ION CHANNELING; MONOCRYSTALS; RECOMBINATION; Defects, ion irradiation, SiC; Environmental Molecular Sciences Laboratory

Citation Formats

Jiang, Weilin, and Weber, William J. Anisotropy of disorder accumulation and recovery in 6H-SiC irradiated with Au2+ ions at 140 K. United States: N. p., 2009. Web. doi:10.1016/j.jnucmat.2009.02.023.
Jiang, Weilin, & Weber, William J. Anisotropy of disorder accumulation and recovery in 6H-SiC irradiated with Au2+ ions at 140 K. United States. https://doi.org/10.1016/j.jnucmat.2009.02.023
Jiang, Weilin, and Weber, William J. 2009. "Anisotropy of disorder accumulation and recovery in 6H-SiC irradiated with Au2+ ions at 140 K". United States. https://doi.org/10.1016/j.jnucmat.2009.02.023.
@article{osti_958003,
title = {Anisotropy of disorder accumulation and recovery in 6H-SiC irradiated with Au2+ ions at 140 K},
author = {Jiang, Weilin and Weber, William J},
abstractNote = {Single crystal <0001>-oriented 6H-SiC was irradiated with Au2+ ions to fluences of 0.032, 0.058 and 0.105 ions/nm2 at 140 K and was subsequently annealed at various temperatures up to 500 K. The relative disorder on both the Si and C sublattices has been determined simultaneously using in-situ D+ ion channeling along the <0001> and <2-201> axes. A higher level of disorder on both the Si and C sublattices is observed along the <2-201>. There is a preferential C disordering and more C interstitials are aligned with <0001>. Room-temperature recovery along <2-201> occurs, which is associated with the <0001>-aligned interstitials that annihilate due to close-pair recombination. Disorder recovery between 400 and 500 K is primarily attributed to annihilation of interstitials that are misaligned with <0001>. Effects of stacking order in SiC on disorder accumulation are insignificant; however, noticeable differences of low-temperature recovery in Au2+-irradiated 6H-SiC and 4H-SiC are observed.},
doi = {10.1016/j.jnucmat.2009.02.023},
url = {https://www.osti.gov/biblio/958003}, journal = {Journal of Nuclear Materials, 389(2):332-335},
issn = {0022-3115},
number = 2,
volume = 389,
place = {United States},
year = {Mon Apr 20 00:00:00 EDT 2009},
month = {Mon Apr 20 00:00:00 EDT 2009}
}