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Title: Electron paramagnetic resonance study of hydrogen-incorporated ultrananocrystalline diamond thin films.

Journal Article · · J. Appl. Phys.
DOI:https://doi.org/10.1063/1.2747593· OSTI ID:953809

Hydrogen-incorporated ultrananocrystalline diamond (UNCD) thin films have been deposited in microwave plasma enhanced chemical vapor deposition (MPECVD) system with various hydrogen concentrations in the Ar/CH{sub 4} gas mixture, and characterized by several techniques including electron paramagnetic resonance (EPR), Raman spectroscopy, scanning electron microscope (SEM), and dc conductivity measurements. The EPR spectrum of diamond film was composed of two Lorentzian lines with different g factors. When hydrogen concentration in the plasma increased during diamond growth, the spin density of the narrow line decreased, whereas the spin density of the broad signal remained roughly constant. We propose that the two EPR components can be attributed to two different phases in the diamond film, i.e., the narrow line is originated from the highly defective grain boundary region and the broad line is related to the defects in the diamond grains.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
DE-AC02-06CH11357
OSTI ID:
953809
Report Number(s):
ANL/MSD/JA-59225; JAPIAU; TRN: US201004%%568
Journal Information:
J. Appl. Phys., Vol. 101, Issue 2007; ISSN 0021-8979
Country of Publication:
United States
Language:
ENGLISH