Non-volatile memory elements based on the intercalation of organic molecules inside carbon nanotubes
- ORNL
We propose a novel class of non-volatile memory elements based on the modification of the transport properties of a conducting carbon nanotube by the presence of a guest molecule having multiple stable orientational states relative to the nanotube that correspond to conducting and non-conducting states. The mechanism, governed by a local gating effect of the molecule on the electronic properties of the nanotube host, is studied using density functional theory. The mechanisms of reversible reading and writing of information are illustrated with a F4 TCNQ molecule encap-sulated inside a metallic carbon nanotube. Our results suggest that this new type of non-volatile memory element is robust, fatigue-free, and can operate at room temperature.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). National Center for Computational Sciences (NCCS)
- Sponsoring Organization:
- USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 953171
- Journal Information:
- Physical Review Letters, Vol. 98; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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