Direct observation of stochastic domain-wall depinning in magnetic nanowires

Journal Article · Sat Nov 01 00:00:00 EDT 2008 · Physical Review Letters

OSTI ID:952582

Im, Mi-Young; Bocklage, Lars; Fischer, Peter; Meier, Guido

The stochastic field-driven depinning of a domain wall pinned at a notch in a magnetic nanowire is directly observed using magnetic X-ray microscopy with high lateral resolution down to 15 nm. The depinning-field distribution in Ni{sub 80}Fe{sub 20} nanowires considerably depends on the wire width and the notch depth. The difference in the multiplicity of domain-wall types generated in the vicinity of a notch is responsible for the observed dependence of the stochastic nature of the domain wall depinning field on the wire width and the notch depth. Thus the random nature of the domain wall depinning process is controllable by an appropriate design of the nanowire.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: Materials Sciences Division
• DOE Contract Number: DE-AC02-05CH11231
• OSTI ID: 952582
• Report Number(s): LBNL-1564E; PRLTAO; TRN: US200913%%678
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

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DESIGN
DISTRIBUTION
MICROSCOPY
MULTIPLICITY
RESOLUTION