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Title: Channeling Studies of CeO₂ and Ce ₁-xZr xO₂ Films on Yttria-Stabilized ZrO₂(111)

Abstract

Rutherford backscattering spectrometry and channeling techniques have been used to investigate the crystalline quality and interfacial properties of epitaxially grown CeO₂ and Ce₀.₇Zr₀.₃O₂ films on yttria-stabilized ZrO₂(111) substrates. Both films appear to have high crystalline quality with minimum yeild of Ce in the CeO₂ and Ce₀.₇Zr₀.₃O₂ films determined to be 4.7% and 12.1% respectively. Visibility of more Ce atoms to the ion beam at the interface compared to the bulk of the film indicates that both films show significant disorder at the interface. The normalized angular yield curves obtained from Ce and Zr indicate that the Ce atomic rows in the CeO₂ film are parallel to the Zr atomic rows in the substrates. Both films appear to have high crystalline quality with minimum yeild of Ce in the CeO₂ and Ce₀.₇Zr₀.₃O₂ films determined to be 4.7% and 12.1% respectively. Visibility of more Ce atoms to the ion beam at the interface compared to the bulk of the film indicates that both films show significant disorder at the interface. The normalized angular yield curves obtained from Ce and Zr indicate that the Ce atomic rows in the CeO₂ film are parallel to the Zr atomic rows in the substrates. Approximately 88%more » of the Zr atoms substitutionally occupy the Ce cation lattice sites in the Ce₀.₇Zr₀.₃O₂ film.« less

Authors:
; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
951882
Report Number(s):
PNNL-SA-34038
KP1504020; TRN: US200913%%86
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Conference
Resource Relation:
Conference: Materials Research Society 2000 Fall Meeting Symposium on Structure-Property Relationships of Oxide Surfaces and Internal Interfaces, 654:Art. No. AA2.6
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHANNELING; ION BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; CERIUM OXIDES; ZIRCONIUM OXIDES; INTERFACES; FILMS; CRYSTAL STRUCTURE; RBS; channeling; crystalline; thin films; Ce; Zr

Citation Formats

Shutthanandan, V, Thevuthasan, Suntharampillai, Kim, Y J, and Peden, Charles HF. Channeling Studies of CeO₂ and Ce₁-xZrxO₂ Films on Yttria-Stabilized ZrO₂(111). United States: N. p., 2001. Web.
Shutthanandan, V, Thevuthasan, Suntharampillai, Kim, Y J, & Peden, Charles HF. Channeling Studies of CeO₂ and Ce₁-xZrxO₂ Films on Yttria-Stabilized ZrO₂(111). United States.
Shutthanandan, V, Thevuthasan, Suntharampillai, Kim, Y J, and Peden, Charles HF. Sun . "Channeling Studies of CeO₂ and Ce₁-xZrxO₂ Films on Yttria-Stabilized ZrO₂(111)". United States.
@article{osti_951882,
title = {Channeling Studies of CeO₂ and Ce₁-xZrxO₂ Films on Yttria-Stabilized ZrO₂(111)},
author = {Shutthanandan, V and Thevuthasan, Suntharampillai and Kim, Y J and Peden, Charles HF},
abstractNote = {Rutherford backscattering spectrometry and channeling techniques have been used to investigate the crystalline quality and interfacial properties of epitaxially grown CeO₂ and Ce₀.₇Zr₀.₃O₂ films on yttria-stabilized ZrO₂(111) substrates. Both films appear to have high crystalline quality with minimum yeild of Ce in the CeO₂ and Ce₀.₇Zr₀.₃O₂ films determined to be 4.7% and 12.1% respectively. Visibility of more Ce atoms to the ion beam at the interface compared to the bulk of the film indicates that both films show significant disorder at the interface. The normalized angular yield curves obtained from Ce and Zr indicate that the Ce atomic rows in the CeO₂ film are parallel to the Zr atomic rows in the substrates. Both films appear to have high crystalline quality with minimum yeild of Ce in the CeO₂ and Ce₀.₇Zr₀.₃O₂ films determined to be 4.7% and 12.1% respectively. Visibility of more Ce atoms to the ion beam at the interface compared to the bulk of the film indicates that both films show significant disorder at the interface. The normalized angular yield curves obtained from Ce and Zr indicate that the Ce atomic rows in the CeO₂ film are parallel to the Zr atomic rows in the substrates. Approximately 88% of the Zr atoms substitutionally occupy the Ce cation lattice sites in the Ce₀.₇Zr₀.₃O₂ film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {7}
}

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