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Title: Self-heating study of an AlGaN/GaN-based heterostructure field effect transistor using ultraviolet micro-Raman scattering.

Abstract

We report micro-Raman studies of self-heating in an AlGaN/GaN heterostructure field-effect transistor using below (visible 488.0 nm) and near (UV 363.8 nm) GaN band-gap excitation. The shallow penetration depth of the UV light allows us to measure temperature rise ({Delta}T) in the two-dimensional electron gas (2DEG) region of the device between drain and source. Visible light gives the average {Delta}T in the GaN layer, and that of the SiC substrate, at the same lateral position. Combined, we depth profile the self-heating. Measured {Delta}T in the 2DEG is consistently over twice the average GaN-layer value. Electrical and thermal transport properties are simulated. We identify a hotspot, located at the gate edge in the 2DEG, as the prevailing factor in the self-heating.

Authors:
 [1]; ;  [1];  [1];  [1]; ; ;
  1. (Texas Tech University, Lubbock, TX)
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE
OSTI Identifier:
951717
Report Number(s):
SAND2005-0028J
TRN: US200913%%27
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Proposed for publication in Applied Physics Letters.
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; FIELD EFFECT TRANSISTORS; ALUMINIUM NITRIDES; GALLIUM NITRIDES; HEATING; ELECTRON GAS; TEMPERATURE MEASUREMENT

Citation Formats

Kasisomayajula, V., Baca, Albert G., AHMAD, I., Berg, Jeremy Mark, Holtz, M, Allerman, Andrew Alan, Tigges, Christopher P., and Kurtz, Steven Ross. Self-heating study of an AlGaN/GaN-based heterostructure field effect transistor using ultraviolet micro-Raman scattering.. United States: N. p., 2005. Web.
Kasisomayajula, V., Baca, Albert G., AHMAD, I., Berg, Jeremy Mark, Holtz, M, Allerman, Andrew Alan, Tigges, Christopher P., & Kurtz, Steven Ross. Self-heating study of an AlGaN/GaN-based heterostructure field effect transistor using ultraviolet micro-Raman scattering.. United States.
Kasisomayajula, V., Baca, Albert G., AHMAD, I., Berg, Jeremy Mark, Holtz, M, Allerman, Andrew Alan, Tigges, Christopher P., and Kurtz, Steven Ross. Sat . "Self-heating study of an AlGaN/GaN-based heterostructure field effect transistor using ultraviolet micro-Raman scattering.". United States. doi:.
@article{osti_951717,
title = {Self-heating study of an AlGaN/GaN-based heterostructure field effect transistor using ultraviolet micro-Raman scattering.},
author = {Kasisomayajula, V. and Baca, Albert G. and AHMAD, I. and Berg, Jeremy Mark and Holtz, M and Allerman, Andrew Alan and Tigges, Christopher P. and Kurtz, Steven Ross},
abstractNote = {We report micro-Raman studies of self-heating in an AlGaN/GaN heterostructure field-effect transistor using below (visible 488.0 nm) and near (UV 363.8 nm) GaN band-gap excitation. The shallow penetration depth of the UV light allows us to measure temperature rise ({Delta}T) in the two-dimensional electron gas (2DEG) region of the device between drain and source. Visible light gives the average {Delta}T in the GaN layer, and that of the SiC substrate, at the same lateral position. Combined, we depth profile the self-heating. Measured {Delta}T in the 2DEG is consistently over twice the average GaN-layer value. Electrical and thermal transport properties are simulated. We identify a hotspot, located at the gate edge in the 2DEG, as the prevailing factor in the self-heating.},
doi = {},
journal = {Proposed for publication in Applied Physics Letters.},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2005},
month = {Sat Jan 01 00:00:00 EST 2005}
}