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Title: Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping

Abstract

The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, <5 mm, the electric field-lines tend to bend away from the side surfaces (i.e., a focusing effect). In thick detectors, >1 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
951300
Report Number(s):
BNL-82184-2009-CP
NN2001000; TRN: US0902166
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Conference
Resource Relation:
Conference: IEEE Dresden 2008; Dresden, Germany; 20081019 through 20081025
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CDTE SEMICONDUCTOR DETECTORS; DISTRIBUTION; ELECTRIC FIELDS; FOCUSING; RESOLUTION; MEASURING METHODS

Citation Formats

Bolotnikov,A.E., , ., Camarda, G.S., Cui, Y., Hossain, A., Yang, G., Yao, H.W., and James, R.B. Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping. United States: N. p., 2009. Web.
Bolotnikov,A.E., , ., Camarda, G.S., Cui, Y., Hossain, A., Yang, G., Yao, H.W., & James, R.B. Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping. United States.
Bolotnikov,A.E., , ., Camarda, G.S., Cui, Y., Hossain, A., Yang, G., Yao, H.W., and James, R.B. Mon . "Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping". United States. https://www.osti.gov/servlets/purl/951300.
@article{osti_951300,
title = {Internal electric-field-lines distribution in CdZnTe detectors measured using X-ray mapping},
author = {Bolotnikov,A.E. and , . and Camarda, G.S. and Cui, Y. and Hossain, A. and Yang, G. and Yao, H.W. and James, R.B.},
abstractNote = {The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, <5 mm, the electric field-lines tend to bend away from the side surfaces (i.e., a focusing effect). In thick detectors, >1 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Oct 19 00:00:00 EDT 2009},
month = {Mon Oct 19 00:00:00 EDT 2009}
}

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