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Title: InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.

Abstract

We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LEDmore » structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.« less

Authors:
;  [1]; ;  [1];  [1]; ; ;  [1];  [1]; ;  [1]
  1. Aonex Technologies Inc., Pasadena, CA
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE
OSTI Identifier:
950099
Report Number(s):
SAND2008-3880J
TRN: US200910%%71
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Proposed for publication in the Journal of Crystal Growth.
Additional Journal Information:
Journal Name: Proposed for publication in the Journal of Crystal Growth.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; CHEMICAL VAPOR DEPOSITION; ELECTROLUMINESCENCE; MONITORING; NITRIDES; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SAPPHIRE; STRAINS; SUBSTRATES; THERMAL EXPANSION; THERMAL STRESSES; TRANSMISSION ELECTRON MICROSCOPY; WAVELENGTHS; X-RAY DIFFRACTION

Citation Formats

Crawford, Mary Hagerott, Olson, S M, Banas, M, Park, Y -B, Ladous, C, Russell, Michael J, Thaler, Gerald, Zahler, J M, Pinnington, T, Koleske, Daniel David, and Atwater, Harry A. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.. United States: N. p., 2008. Web.
Crawford, Mary Hagerott, Olson, S M, Banas, M, Park, Y -B, Ladous, C, Russell, Michael J, Thaler, Gerald, Zahler, J M, Pinnington, T, Koleske, Daniel David, & Atwater, Harry A. InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.. United States.
Crawford, Mary Hagerott, Olson, S M, Banas, M, Park, Y -B, Ladous, C, Russell, Michael J, Thaler, Gerald, Zahler, J M, Pinnington, T, Koleske, Daniel David, and Atwater, Harry A. Sun . "InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.". United States.
@article{osti_950099,
title = {InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.},
author = {Crawford, Mary Hagerott and Olson, S M and Banas, M and Park, Y -B and Ladous, C and Russell, Michael J and Thaler, Gerald and Zahler, J M and Pinnington, T and Koleske, Daniel David and Atwater, Harry A},
abstractNote = {We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel composite substrate designed to eliminate the coefficient of thermal expansion (CTE) mismatch problems which impact GaN growth on bulk sapphire. To form the composite substrate, a thin sapphire layer is wafer-bonded to a polycrystalline aluminum nitride (P-AlN) support substrate. The sapphire layer provides the epitaxial template for the growth; however, the thermo-mechanical properties of the composite substrate are determined by the P-AlN. Using these substrates, thermal stresses associated with temperature changes during growth should be reduced an order of magnitude compared to films grown on bulk sapphire, based on published CTE data. In order to test the suitability of the substrates for GaN LED growth, test structures were grown by metalorganic chemical vapor deposition (MOCVD) using standard process conditions for GaN growth on sapphire. Bulk sapphire substrates were included as control samples in all growth runs. In situ reflectance monitoring was used to compare the growth dynamics for the different substrates. The material quality of the films as judged by X-ray diffraction (XRD), photoluminescence and transmission electron microscopy (TEM) was similar for the composite substrate and the sapphire control samples. Electroluminescence was obtained from the LED structure grown on a P-AlN composite substrate, with a similar peak wavelength and peak width to the control samples. XRD and Raman spectroscopy results confirm that the residual strain in GaN films grown on the composite substrates is dramatically reduced compared to growth on bulk sapphire substrates.},
doi = {},
journal = {Proposed for publication in the Journal of Crystal Growth.},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {6}
}