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Title: Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires

Abstract

The authors study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a {le} 1 micron thick AlGaAs/GaAs double quantum well heterostructure, allowing independent control of the width of each quantum well. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at {approximately}6 Tesla is observed with a strong gate voltage dependence. The data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
9499
Report Number(s):
SAND99-2028J
TRN: AH200124%%293
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Other Information: Submitted to Physical Review B; PBD: 4 Aug 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FERMI LEVEL; MAGNETORESISTANCE; WIRES; ONE-DIMENSIONAL CALCULATIONS; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES

Citation Formats

Moon, J.S., Blount, M.A., Simmons, J.A., Wendt, J.R., Lyo, S.K., and Reno, J.L. Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires. United States: N. p., 1999. Web. doi:10.1103/PhysRevB.60.11530.
Moon, J.S., Blount, M.A., Simmons, J.A., Wendt, J.R., Lyo, S.K., & Reno, J.L. Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires. United States. doi:10.1103/PhysRevB.60.11530.
Moon, J.S., Blount, M.A., Simmons, J.A., Wendt, J.R., Lyo, S.K., and Reno, J.L. Wed . "Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires". United States. doi:10.1103/PhysRevB.60.11530. https://www.osti.gov/servlets/purl/9499.
@article{osti_9499,
title = {Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires},
author = {Moon, J.S. and Blount, M.A. and Simmons, J.A. and Wendt, J.R. and Lyo, S.K. and Reno, J.L.},
abstractNote = {The authors study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a {le} 1 micron thick AlGaAs/GaAs double quantum well heterostructure, allowing independent control of the width of each quantum well. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at {approximately}6 Tesla is observed with a strong gate voltage dependence. The data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.},
doi = {10.1103/PhysRevB.60.11530},
journal = {Physical Review B},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {8}
}