Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires
Abstract
The authors study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a {le} 1 micron thick AlGaAs/GaAs double quantum well heterostructure, allowing independent control of the width of each quantum well. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at {approximately}6 Tesla is observed with a strong gate voltage dependence. The data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- US Department of Energy (US)
- OSTI Identifier:
- 9499
- Report Number(s):
- SAND99-2028J
TRN: AH200124%%293
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Other Information: Submitted to Physical Review B; PBD: 4 Aug 1999
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; FERMI LEVEL; MAGNETORESISTANCE; WIRES; ONE-DIMENSIONAL CALCULATIONS; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES
Citation Formats
Moon, J S, Blount, M A, Simmons, J A, Wendt, J R, Lyo, S K, and Reno, J L. Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires. United States: N. p., 1999.
Web. doi:10.1103/PhysRevB.60.11530.
Moon, J S, Blount, M A, Simmons, J A, Wendt, J R, Lyo, S K, & Reno, J L. Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires. United States. https://doi.org/10.1103/PhysRevB.60.11530
Moon, J S, Blount, M A, Simmons, J A, Wendt, J R, Lyo, S K, and Reno, J L. 1999.
"Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires". United States. https://doi.org/10.1103/PhysRevB.60.11530. https://www.osti.gov/servlets/purl/9499.
@article{osti_9499,
title = {Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires},
author = {Moon, J S and Blount, M A and Simmons, J A and Wendt, J R and Lyo, S K and Reno, J L},
abstractNote = {The authors study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a {le} 1 micron thick AlGaAs/GaAs double quantum well heterostructure, allowing independent control of the width of each quantum well. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at {approximately}6 Tesla is observed with a strong gate voltage dependence. The data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.},
doi = {10.1103/PhysRevB.60.11530},
url = {https://www.osti.gov/biblio/9499},
journal = {Physical Review B},
number = ,
volume = ,
place = {United States},
year = {Wed Aug 04 00:00:00 EDT 1999},
month = {Wed Aug 04 00:00:00 EDT 1999}
}
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