skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Surface & Interface Properties of 10-12 Unit Cells Thick Sputter Deposited Epitaxial CeO2 Films

Abstract

Ultra-thin and continuous epitaxial films with relaxed lattice strain can potentially maintain more of its bulk physical and chemical properties and are useful as buffer layers. We study surface, interface and micro-structural properties of ultra-thin (~10-12 unit cells thick) epitaxial ceria films grown on single crystal YSZ substrates. The out-of -plane and in-plane lattice parameters indicate relaxation in the continuous film due to misfit dislocations seen by high-resolution transmission electron microscopy (HRTEM) and substrate roughness of ~1-2 unit cells, confirmed by atomic force microscopy and HRTEM. A combination of secondary sputtering, substrate roughness and surface reduction creating secondary phase were likely causes of surface roughness which should be reduced to a minimum level for effective use of it as buffer layers.

Authors:
; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
949117
Report Number(s):
PNNL-SA-60647
KP1504020; TRN: US200907%%329
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Research Letters in Materials Science, 2008:Article ID 206019
Additional Journal Information:
Journal Volume: 2008
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CERIUM OXIDES; EPITAXY; THIN FILMS; SURFACE PROPERTIES; INTERFACES; MICROSTRUCTURE; DISLOCATIONS; LATTICE PARAMETERS; RELAXATION; ROUGHNESS

Citation Formats

Saraf, Laxmikant V, Wang, Chong M, Engelhard, Mark H, and Nachimuthu, Ponnusamy. Surface & Interface Properties of 10-12 Unit Cells Thick Sputter Deposited Epitaxial CeO2 Films. United States: N. p., 2008. Web. doi:10.1155/2008/206019.
Saraf, Laxmikant V, Wang, Chong M, Engelhard, Mark H, & Nachimuthu, Ponnusamy. Surface & Interface Properties of 10-12 Unit Cells Thick Sputter Deposited Epitaxial CeO2 Films. United States. doi:10.1155/2008/206019.
Saraf, Laxmikant V, Wang, Chong M, Engelhard, Mark H, and Nachimuthu, Ponnusamy. Thu . "Surface & Interface Properties of 10-12 Unit Cells Thick Sputter Deposited Epitaxial CeO2 Films". United States. doi:10.1155/2008/206019.
@article{osti_949117,
title = {Surface & Interface Properties of 10-12 Unit Cells Thick Sputter Deposited Epitaxial CeO2 Films},
author = {Saraf, Laxmikant V and Wang, Chong M and Engelhard, Mark H and Nachimuthu, Ponnusamy},
abstractNote = {Ultra-thin and continuous epitaxial films with relaxed lattice strain can potentially maintain more of its bulk physical and chemical properties and are useful as buffer layers. We study surface, interface and micro-structural properties of ultra-thin (~10-12 unit cells thick) epitaxial ceria films grown on single crystal YSZ substrates. The out-of -plane and in-plane lattice parameters indicate relaxation in the continuous film due to misfit dislocations seen by high-resolution transmission electron microscopy (HRTEM) and substrate roughness of ~1-2 unit cells, confirmed by atomic force microscopy and HRTEM. A combination of secondary sputtering, substrate roughness and surface reduction creating secondary phase were likely causes of surface roughness which should be reduced to a minimum level for effective use of it as buffer layers.},
doi = {10.1155/2008/206019},
journal = {Research Letters in Materials Science, 2008:Article ID 206019},
number = ,
volume = 2008,
place = {United States},
year = {2008},
month = {5}
}