skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: PV Reliability Determination from I-V Measurement and Analysis

Journal Article · · Reliability of Photovoltaic Cells, Modules, Components, and Systems: Proceedings of SPIE Conference, 11-13 August 2008, San Diego, California
DOI:https://doi.org/10.1117/12.795965· OSTI ID:947877

We discuss the measurement and analysis of current vs. voltage (I-V) characteristics of photovoltaic (PV) cells and modules for reliability determination. We discuss both the error sources in the measurements and the strategies to minimize their influence. These error sources include the sample area, spectral errors, temperature fluctuations, current and voltage response time, contacting, and degradation during testing issues. Information that can be extracted from light and dark I-V includes peak power, open-circuit voltage, short-circuit current, series and shunt resistance, diode quality factor, dark current, and photo-current. The quantum efficiency provides information on photo-current nonlinearities, current generation and recombination mechanisms.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99-GO10337
OSTI ID:
947877
Journal Information:
Reliability of Photovoltaic Cells, Modules, Components, and Systems: Proceedings of SPIE Conference, 11-13 August 2008, San Diego, California, Related Information: Paper No. 704803
Publisher:
Bellingham, WA: SPIE - The International Society for Optical Engineering
Country of Publication:
United States
Language:
English