40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions
A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga{sub .51}In{sub .49}P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In{sub .04}Ga{sub .96}As middle junction, and a metamorphic 0.89 eV In{sub .37}Ga{sub .63}As bottom junction. The two metamorphic junctions contained approximately 1 x 10{sup 5} cm{sup -2} and 2-3 x 10{sup 6} cm{sup -2} threading dislocations, respectively.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 947414
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 12, 2008; Related Information: Article No. 123505; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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