The Role of Electron Transport and Trapping in MOS Total-Dose Modeling
Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models. Here we separate the effects of electron-hole annihilation and electron trapping on the neutralization of radiation-induced charge during switched-bias irradiation for hard and soft oxides, via combined thermally stimulated current (TSC) and capacitance-voltage measurements. We also show that present total-dose models cannot account for the thermal stability of deeply trapped electrons near the Si/SiO{sub 2} interface, or the inability of electrons in deep or shallow traps to contribute to TSC at positive bias following (1) room-temperature, (2) high-temperature, or (3) switched-bias irradiation. These results require revisions of modeling parameters and boundary conditions for hole and electron transport in SiO{sub 2}. The nature of deep and shallow electron traps in the near-interfacial SiO{sub 2} is discussed.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 9469
- Report Number(s):
- SAND99-0355J; TRN: US0103132
- Journal Information:
- IEEE Transactions on Nuclear Science, Other Information: Submitted to IEEE Transactions on Nuclear Science; PBD: 19 Jul 1999
- Country of Publication:
- United States
- Language:
- English
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