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Title: Nanofabrication of super-high-aspect-ratio structures in hydrogen silsesquioxane from direct-write e-beam lithography and hot development.

Abstract

Super-high-aspect-ratio structures (>10) in hydrogen silsesquioxane resist using direct write electron beam lithography at 100 kV and hot development and rinse are reported. Posts of 100 nm in width and 1.2 {micro}m tall have been successfully fabricated without the need of supercritical drying. Hot rinse solution with isopropyl alcohol has been used to reduce surface tension effects during drying. Dose absorption effects have been observed and modeled using known Monte Carlo models. These results indicate that for e-beam exposures of thick negative resists (>1 {micro}m), the bottom of the structures will have less cross-link density and therefore will be less stiff than the top. These results will have impact in the design of high-aspect-ratio structures that can be used in microelectromechanical system devices and high-aspect-ratio Fresnel zone plates.

Authors:
; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
946678
Report Number(s):
ANL/CNM/CP-62795
TRN: US200903%%564
DOE Contract Number:
DE-AC02-06CH11357
Resource Type:
Conference
Resource Relation:
Journal Name: J. Vac. Sci. Technol. B; Journal Volume: 26; Journal Issue: 6 ; Nov. 2008; Conference: 52nd International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication; May 27, 2008 - May 30, 2008; Portland, OR
Country of Publication:
United States
Language:
ENGLISH
Subject:
08 HYDROGEN; ABSORPTION; ALCOHOLS; DESIGN; DRYING; ELECTRON BEAMS; HYDROGEN; PHOTON BEAMS; PLATES; SURFACE TENSION

Citation Formats

Ocola, L. E., Tirumala, V. R., Center for Nanoscale Materials, and NIST. Nanofabrication of super-high-aspect-ratio structures in hydrogen silsesquioxane from direct-write e-beam lithography and hot development.. United States: N. p., 2008. Web. doi:10.1116/1.3021395.
Ocola, L. E., Tirumala, V. R., Center for Nanoscale Materials, & NIST. Nanofabrication of super-high-aspect-ratio structures in hydrogen silsesquioxane from direct-write e-beam lithography and hot development.. United States. doi:10.1116/1.3021395.
Ocola, L. E., Tirumala, V. R., Center for Nanoscale Materials, and NIST. 2008. "Nanofabrication of super-high-aspect-ratio structures in hydrogen silsesquioxane from direct-write e-beam lithography and hot development.". United States. doi:10.1116/1.3021395.
@article{osti_946678,
title = {Nanofabrication of super-high-aspect-ratio structures in hydrogen silsesquioxane from direct-write e-beam lithography and hot development.},
author = {Ocola, L. E. and Tirumala, V. R. and Center for Nanoscale Materials and NIST},
abstractNote = {Super-high-aspect-ratio structures (>10) in hydrogen silsesquioxane resist using direct write electron beam lithography at 100 kV and hot development and rinse are reported. Posts of 100 nm in width and 1.2 {micro}m tall have been successfully fabricated without the need of supercritical drying. Hot rinse solution with isopropyl alcohol has been used to reduce surface tension effects during drying. Dose absorption effects have been observed and modeled using known Monte Carlo models. These results indicate that for e-beam exposures of thick negative resists (>1 {micro}m), the bottom of the structures will have less cross-link density and therefore will be less stiff than the top. These results will have impact in the design of high-aspect-ratio structures that can be used in microelectromechanical system devices and high-aspect-ratio Fresnel zone plates.},
doi = {10.1116/1.3021395},
journal = {J. Vac. Sci. Technol. B},
number = 6 ; Nov. 2008,
volume = 26,
place = {United States},
year = 2008,
month =
}

Conference:
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