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Title: Dielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films.

Abstract

Diamond thin films with a broad range of microstructures from a ultrananocrystalline diamond (UNCD) form developed at Argonne National Laboratory to a microcrystalline diamond (MCD) form have been grown with different hydrogen percentages in the Ar/CH{sub 4} gas mixture used in the microwave plasma enhanced chemical vapor deposition (CVD) process. The dielectric properties of the CVD diamond thin films have been studied using impedance and dc measurements on metal-diamond-metal test structures. Close correlations have been observed between the hydrogen content in the bulk of the diamond films, measured by elastic recoil detection (ERD), and their electrical conductivity and capacitance-frequency (C-f) behaviors. Addition of hydrogen gas in the Ar/CH{sub 4} gas mixture used to grow the diamond films appears to have two main effects depending on the film microstructure, namely, (a) in the UNCD films, hydrogen incorporates into the atomically abrupt grain boundaries satisfying sp{sup 2} carbon dangling bonds, resulting in increased resistivity, and (b) in MCD, atomic hydrogen produced in the plasma etches preferentially the graphitic phase codepositing with the diamond phase, resulting in the statistical survival and growth of large diamond grains and dominance of the diamond phase, and thus having significant impact on the dielectric properties of thesemore » films.« less

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
946676
Report Number(s):
ANL/MSD/JA-60401
Journal ID: ISSN 0021-8979; JAPIAU; TRN: US200903%%563
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: J. Appl. Phys.; Journal Volume: 102; Journal Issue: 2007
Country of Publication:
United States
Language:
ENGLISH
Subject:
08 HYDROGEN; 36 MATERIALS SCIENCE; ANL; CARBON; CHEMICAL VAPOR DEPOSITION; DETECTION; DIAMONDS; DIELECTRIC PROPERTIES; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; HYDROGEN; IMPEDANCE; MICROSTRUCTURE; MIXTURES; PLASMA; THIN FILMS

Citation Formats

Liu, C., Xiao, X., Wang, J., Shi, B., Auciello, O., Carlisle, J. A., Carpick, R., Adiga, V., Univ. of Wisconsin at Madison, and Univ. of Pennsylvania. Dielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films.. United States: N. p., 2007. Web. doi:10.1063/1.2785874.
Liu, C., Xiao, X., Wang, J., Shi, B., Auciello, O., Carlisle, J. A., Carpick, R., Adiga, V., Univ. of Wisconsin at Madison, & Univ. of Pennsylvania. Dielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films.. United States. doi:10.1063/1.2785874.
Liu, C., Xiao, X., Wang, J., Shi, B., Auciello, O., Carlisle, J. A., Carpick, R., Adiga, V., Univ. of Wisconsin at Madison, and Univ. of Pennsylvania. Mon . "Dielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films.". United States. doi:10.1063/1.2785874.
@article{osti_946676,
title = {Dielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films.},
author = {Liu, C. and Xiao, X. and Wang, J. and Shi, B. and Auciello, O. and Carlisle, J. A. and Carpick, R. and Adiga, V. and Univ. of Wisconsin at Madison and Univ. of Pennsylvania},
abstractNote = {Diamond thin films with a broad range of microstructures from a ultrananocrystalline diamond (UNCD) form developed at Argonne National Laboratory to a microcrystalline diamond (MCD) form have been grown with different hydrogen percentages in the Ar/CH{sub 4} gas mixture used in the microwave plasma enhanced chemical vapor deposition (CVD) process. The dielectric properties of the CVD diamond thin films have been studied using impedance and dc measurements on metal-diamond-metal test structures. Close correlations have been observed between the hydrogen content in the bulk of the diamond films, measured by elastic recoil detection (ERD), and their electrical conductivity and capacitance-frequency (C-f) behaviors. Addition of hydrogen gas in the Ar/CH{sub 4} gas mixture used to grow the diamond films appears to have two main effects depending on the film microstructure, namely, (a) in the UNCD films, hydrogen incorporates into the atomically abrupt grain boundaries satisfying sp{sup 2} carbon dangling bonds, resulting in increased resistivity, and (b) in MCD, atomic hydrogen produced in the plasma etches preferentially the graphitic phase codepositing with the diamond phase, resulting in the statistical survival and growth of large diamond grains and dominance of the diamond phase, and thus having significant impact on the dielectric properties of these films.},
doi = {10.1063/1.2785874},
journal = {J. Appl. Phys.},
number = 2007,
volume = 102,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}