skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Understanding surface nanostructures in compound semiconductor alloys.


No abstract prepared.

;  [1];  [1];  [1];  [1];  [1]
  1. (University of Michigan, Ann Arbor, MI)
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
OSTI Identifier:
Report Number(s):
TRN: US200903%%304
DOE Contract Number:
Resource Type:
Resource Relation:
Conference: Proposed for presentation at the CINT Onsite Review held April 18-19, 2007 in Los Alamos, NM.
Country of Publication:
United States

Citation Formats

Modine, Normand Arthur, Pearson, C., Sears, L., Mirecki Millunchick, J., Van der Ven, A., and Bickel, J. Understanding surface nanostructures in compound semiconductor alloys.. United States: N. p., 2007. Web.
Modine, Normand Arthur, Pearson, C., Sears, L., Mirecki Millunchick, J., Van der Ven, A., & Bickel, J. Understanding surface nanostructures in compound semiconductor alloys.. United States.
Modine, Normand Arthur, Pearson, C., Sears, L., Mirecki Millunchick, J., Van der Ven, A., and Bickel, J. Tue . "Understanding surface nanostructures in compound semiconductor alloys.". United States. doi:.
title = {Understanding surface nanostructures in compound semiconductor alloys.},
author = {Modine, Normand Arthur and Pearson, C. and Sears, L. and Mirecki Millunchick, J. and Van der Ven, A. and Bickel, J.},
abstractNote = {No abstract prepared.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2007},
month = {Tue May 01 00:00:00 EDT 2007}

Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:
  • Reacted films on compound semiconductor substrates present challenging materials characterization problems which often require the application of transmission electron microscopy (TEM) techniques. In this paper, both the problem-solving potential of the TEM techniques and the limits imposed by preparation of thin film/compound semiconductor TEM specimens are discussed. Studies of the Ni/GaAs, CuCl(aq)/CdS and Pd/GaAs reactions exemplify the role of TEM in identifying and determining the spatial distribution of interface-stabilized polymorphs and new ternary phases (e.g., tetragonal Cu/sub 2/S, Ni/sub 3/GaAs and Pd/sub x/GaAs). These examples also serve to clarify the relationship between TEM and complementary analysis techniques such as Rutherfordmore » backscattering spectrometry, Auger electron spectroscopy and glancing-angle x-ray diffraction. In particular, it is argued that a combination of (1) high-spatial-resolution information obtained by TEM and (2) an indication of the ''average'' behavior provided by data from a complementary characterization technique provide the minimum quality and quantity of data necessary to understand most reactions on compound semiconductor substrates.« less
  • Abstract not provided.
  • Abstract not provided.
  • This paper shows that the recently proposed photoluminescence surface state spectroscopy (PLS{sup 3}) technique allows an in-situ, contactless and non-destructive determination of the value of the effective surface recombination velocity (S) under sunlight illumination and the surface/interface state density (N{sub ss}) distributions. This technique is successfully applied to measurement of the values of S at variously passivated Si surfaces. A best value of 3,000 cm/s is obtained under 1 sun condition for thermal oxidation. S is greatly reduced under concentrated sunlight. N{sub ss} distributions at compound semiconductor surfaces and heterointerfaces are also characterized to optimize the fabrication process of compoundmore » semiconductor solar cells. Formation of Si interface control layer (ICL) between InGaAs and SiO{sub 2} greatly reduces the interface states. Growth interruption at AlGaAs/GaAs hetero-interface produces high density of interface states. InAlAs/InGaAs heterointerfaces are also investigated. These results indicate that the new PLS{sup 3} technique is useful for the characterization and optimization of the fabrication processes of the silicon and compound semiconductor solar cells.« less
  • Small nanoparticles have a large proportion of their atoms either at or near the surface, and those in clusters are essentially all on the surface. As a consequence, the details of the surface structure are of paramount importance in governing the overall stability of the particle. Just as with bulk materials, factors that determine this stability include “bulk” structure, surface reconstruction, charge balance and hybridization, ionicity, strain, stoichiometry, and the presence of adsorbates. Needless to say, many of these factors, such as charge balance, hybridization and strain, are interdependent. These factors all contribute to the overall binding energy of clustersmore » and small nanoparticles and play a role in determining the deviations from an inverse size dependence that we have previously reported for compound semiconductor materials. Using first-principles density functional theory calculations, we have explored how these factors influence particle stability under a variety of conditions.« less