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Title: Optimization of Buffer Layers for Lattice-Mismatched Epitaxy of GaxIn1-xAs/InAsyP1-y Double-Heterostructures on InP

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
944499
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Solar Energy Materials and Solar Cells; Journal Volume: 91; Journal Issue: 10, 2007
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Solar Energy - Photovoltaics

Citation Formats

Ahrenkiel, S. P., Wanlass, M. W., Carapella, J. J., Ahrenkiel, R. K., Johnston, S. W., and Gedvilas, L. M. Optimization of Buffer Layers for Lattice-Mismatched Epitaxy of GaxIn1-xAs/InAsyP1-y Double-Heterostructures on InP. United States: N. p., 2007. Web. doi:10.1016/j.solmat.2007.02.008.
Ahrenkiel, S. P., Wanlass, M. W., Carapella, J. J., Ahrenkiel, R. K., Johnston, S. W., & Gedvilas, L. M. Optimization of Buffer Layers for Lattice-Mismatched Epitaxy of GaxIn1-xAs/InAsyP1-y Double-Heterostructures on InP. United States. doi:10.1016/j.solmat.2007.02.008.
Ahrenkiel, S. P., Wanlass, M. W., Carapella, J. J., Ahrenkiel, R. K., Johnston, S. W., and Gedvilas, L. M. Mon . "Optimization of Buffer Layers for Lattice-Mismatched Epitaxy of GaxIn1-xAs/InAsyP1-y Double-Heterostructures on InP". United States. doi:10.1016/j.solmat.2007.02.008.
@article{osti_944499,
title = {Optimization of Buffer Layers for Lattice-Mismatched Epitaxy of GaxIn1-xAs/InAsyP1-y Double-Heterostructures on InP},
author = {Ahrenkiel, S. P. and Wanlass, M. W. and Carapella, J. J. and Ahrenkiel, R. K. and Johnston, S. W. and Gedvilas, L. M.},
abstractNote = {},
doi = {10.1016/j.solmat.2007.02.008},
journal = {Solar Energy Materials and Solar Cells},
number = 10, 2007,
volume = 91,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • The InGaAlAs epilayer is lattice matched to the InP substrate at an InAs mole fraction of 0.53. Experiments were conducted systematically to establish growth parameters for InGaAlAs epilayers with good crystalline and optical quality suitable for laser device applications. Quaternary alloy epilayers of InGaAlAs were grown on InP substrates by the conventional solid source molecular-beam epitaxy technique. The normalized In flux was varied in the range 0.25{endash}0.47 resulting in compressive, matched, and tensile epilayers with respect to the InP substrate. Rocking curves obtained from a double crystal x-ray diffractometer showed the best half-width of 15 arcsec for the epilayer matchedmore » to the InP substrate with a mismatch of only 0.03{percent}. Photoluminescence peaks obtained at room and 4 K temperatures indicate half-widths of 70 and 12 meV, respectively. These results are comparable with the best values reported on this material. {copyright} {ital 1996 American Vacuum Society}« less
  • The impact of interface switching sequences on interface quality and minority carrier recombination in In{sub 0.53}Ga{sub 0.47}As/InP double heterostructure (DH) grown by solid-source molecular-beam epitaxy (MBE) was studied. As{sub 2} exposure at the lower In{sub 0.53}Ga{sub 0.47}As/InP interface prior to In{sub 0.53}Ga{sub 0.47}As growth was found to cause enhanced As diffusion into the underlying InP that correlates with steadily increased photoconductive decay (PCD) lifetimes beyond the theoretical radiative and Auger limit. Low-temperature PCD measurements reveal that a persistent photoconductivity (PPC) process is responsible for the high 'apparent' lifetimes. The PPC effect increases monotonically with As{sub 2} exposure on the InPmore » surface, implying the involvement of interfacial defects in the carrier recombination dynamics of In{sub 0.53}Ga{sub 0.47}As/InP DHs grown by MBE.« less
  • Morphological and physical properties of Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As heterostructures grown by molecular beam epitaxy, lattice relaxed on GaAs substrates and lattice matched on InP substrates, are presented. Both a quaternary linear and step graded lattice relaxed buffer concept is implemented to accomodate the lattice mismatch between the GaAs substrate and the Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As layer sequence. The surface morphology and the transport properties of Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As high electron mobility transistor structures were studied by atomic force microscopy and Hall effect measurements, respectively. Optical properties were investigated by low temperature photoluminescence experiments on quantummore » well structures. The linear graded buffer approach was found to result in superior heterostructure properties due to the two dimensional growth mode during the whole growth process resulting in the typical cross hatched surface morphology. In contrast, the use of step graded buffer layers resulted in three dimensional layer growth and inferior layer quality. However, by increasing the number of steps, i.e., reducing the change in the lattice constant for each step and thus approaching a linear grading, two dimensional growth is recovered. {copyright} {ital 1996 American Institute of Physics.}« less