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Title: Physical properties in thin films of iron oxides.

Journal Article · · Microelectron. J.

We have grown hematite ({alpha}-Fe{sub 2}O{sub 3}) thin films on stainless steel substrates and magnetite (Fe{sub 3}O{sub 4}) thin films on (0 0 1)-Si single crystal substrates by a RF magnetron sputtering process. {alpha}-Fe{sub 2}O{sub 3} thin films were grown in an Ar atmosphere at substrate temperatures around 400 C, and Fe{sub 3}O{sub 4} thin films in an Ar/O{sub 2} reactive atmosphere at substrate temperatures around 500 C. Conversion electron Moessbauer (CEM) spectra of {alpha}-Fe{sub 2}O{sub 3} thin films exhibit values for hyperfine parameter characteristic of the hematite stoichiometric phase in the weak ferromagnetic state [R.E. Vandenberghe, in: Moessbauer Spectroscopy and Applications in Geology, University Gent, Belgium, 1990. [1]]. Furthermore, the relative line intensity ratio suggests that the magnetization vector of the polycrystalline film is aligned preferentially parallel to the surface. The CEM spectra of Fe{sub 3}O{sub 4} thin films show the presence of only the stoichiometric phase, and the values for the hyperfine fields and isomer shifts of the A and B sites are consistent with bulk Fe{sub 3}O{sub 4} [1]. The X-ray diffraction (XRD) pattern of the polycrystalline thin films also corresponds to {alpha}-Fe{sub 2}O{sub 3} and Fe{sub 3}O{sub 4} [JCPDS, X-ray diffraction data cards, 2001. [2]]. The samples were also analyzed by atomic force microscopy (AFM) and they reveal a grain morphology common for polycrystalline films. We found an average grain size of 211 nm and surface roughness of 45 nm in {alpha}-Fe{sub 2}O{sub 3} films and an average grain size of 148 nm and surface roughness of 1.2 nm in Fe{sub 3}O{sub 4} films.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
DE-AC02-06CH11357
OSTI ID:
944037
Report Number(s):
ANL/MSD/JA-63026; MICEB9; TRN: US200902%%539
Journal Information:
Microelectron. J., Vol. 39, Issue 11 ; 2008; ISSN 0026-2692
Country of Publication:
United States
Language:
ENGLISH