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Title: Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices

Abstract

We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of {approx}360 C. At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320 C. C-V analysis indicates that a ZnTe:Cu layer thickness of < {approx}0.5 mum does not yield the degree of CdTe net acceptor concentration necessary to reduce space charge width to its optimum value for n-p device operation. The thickest ZnTe:Cu layer investigated (1mum) yields the highest CdTe net acceptor concentration, lowest value of J{sub o}, and highest V{sub oc}. However, performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
943992
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: [Proceedings] 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), 7-12 May 2006, Waikoloa, Hawaii; Related Information: For preprint version see NREL/CP-520-39804
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ENERGY CONVERSION; FILL FACTORS; PERFORMANCE; SPACE CHARGE; THICKNESS; Solar Energy - Photovoltaics

Citation Formats

Gessert, T. A., Asher, S., Johnston, S., Duda, A., Young, M. R., and Moriarty, T. Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices. United States: N. p., 2006. Web.
Gessert, T. A., Asher, S., Johnston, S., Duda, A., Young, M. R., & Moriarty, T. Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices. United States.
Gessert, T. A., Asher, S., Johnston, S., Duda, A., Young, M. R., and Moriarty, T. Sun . "Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices". United States. doi:.
@article{osti_943992,
title = {Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices},
author = {Gessert, T. A. and Asher, S. and Johnston, S. and Duda, A. and Young, M. R. and Moriarty, T.},
abstractNote = {We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of {approx}360 C. At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320 C. C-V analysis indicates that a ZnTe:Cu layer thickness of < {approx}0.5 mum does not yield the degree of CdTe net acceptor concentration necessary to reduce space charge width to its optimum value for n-p device operation. The thickest ZnTe:Cu layer investigated (1mum) yields the highest CdTe net acceptor concentration, lowest value of J{sub o}, and highest V{sub oc}. However, performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}

Conference:
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