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Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities

Patent ·
OSTI ID:943337

A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wave vector of the DW material; and structure for applying an external spatially periodic electrostatic potential over the dielectric layer.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM
Sponsoring Organization:
United States Department of Energy
DOE Contract Number:
W-7405-ENG-36
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM)
Patent Number(s):
7,408,235
Application Number:
10/887,153
OSTI ID:
943337
Country of Publication:
United States
Language:
English

References (3)

Charge‐Density‐Wave Conductors journal May 1996
Field modulation effects on charge-density-wave conduction in NbSe3 journal July 2000
Field-Effect Modulation of Charge-Density-Wave Transport in NbSe 3 and TaS 3 journal June 1995