skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}Op on (111) SrTiO{sub 3}.

Abstract

Epitaxial SrBi{sub 2}Nb{sub 2}O{sub 9} thin films have been grown with a (103) orientation on (111) SrTiO{sub 3} substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO{sub 3} electrodes enabled the electrical properties of these (103)-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 {mu}C/cm{sup 2}, and the dielectric loss was 2.5% for a 0.5-{mu}m-thick film.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
942814
Report Number(s):
ANL/MSD/JA-34875
Journal ID: ISSN 0003-6951; APPLAB; TRN: US200923%%616
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Appl. Phys. Lett.
Additional Journal Information:
Journal Volume: 76; Journal Issue: 20 ; May 15, 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; BISMUTH COMPOUNDS; CRYSTAL GROWTH; DEPOSITION; DIELECTRIC MATERIALS; ELECTRICAL PROPERTIES; ELECTRODES; EPITAXY; FERROELECTRIC MATERIALS; NIOBATES; PERMITTIVITY; PEROVSKITES; POLARIZATION; STRONTIUM COMPOUNDS; STRUCTURAL CHEMICAL ANALYSIS; SUBSTRATES; THIN FILMS; TITANATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Lettieri, J., Zurbuchen, M. A., Jia, Y., Scholom, D. G., Streiffer, S. K., Hawley, M. E., Materials Science Division, Pennsylvania State Univ., and LANL. Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}Op on (111) SrTiO{sub 3}.. United States: N. p., 2000. Web. doi:10.1063/1.126522.
Lettieri, J., Zurbuchen, M. A., Jia, Y., Scholom, D. G., Streiffer, S. K., Hawley, M. E., Materials Science Division, Pennsylvania State Univ., & LANL. Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}Op on (111) SrTiO{sub 3}.. United States. doi:10.1063/1.126522.
Lettieri, J., Zurbuchen, M. A., Jia, Y., Scholom, D. G., Streiffer, S. K., Hawley, M. E., Materials Science Division, Pennsylvania State Univ., and LANL. Mon . "Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}Op on (111) SrTiO{sub 3}.". United States. doi:10.1063/1.126522.
@article{osti_942814,
title = {Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}Op on (111) SrTiO{sub 3}.},
author = {Lettieri, J. and Zurbuchen, M. A. and Jia, Y. and Scholom, D. G. and Streiffer, S. K. and Hawley, M. E. and Materials Science Division and Pennsylvania State Univ. and LANL},
abstractNote = {Epitaxial SrBi{sub 2}Nb{sub 2}O{sub 9} thin films have been grown with a (103) orientation on (111) SrTiO{sub 3} substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO{sub 3} electrodes enabled the electrical properties of these (103)-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 {mu}C/cm{sup 2}, and the dielectric loss was 2.5% for a 0.5-{mu}m-thick film.},
doi = {10.1063/1.126522},
journal = {Appl. Phys. Lett.},
issn = {0003-6951},
number = 20 ; May 15, 2000,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}