Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate
Patent
·
OSTI ID:941667
- Los Alamos, NM
- Santa Fe, NM
A method of forming a nanostructure at low temperatures. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of at least one of nitrogen and oxygen is generated within a laser-sustained-discharge plasma source and a collimated beam of energetic neutral atoms and molecules is directed from the plasma source onto a surface of the substrate to form the nanostructure. The energetic neutral atoms and molecules in the plasma have an average kinetic energy in a range from about 1 eV to about 5 eV.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM
- Sponsoring Organization:
- United States Department of Energy
- DOE Contract Number:
- W-7405-ENG-36
- Assignee:
- Los Alamos National Secruity, LLC (Los Alamos, NM)
- Patent Number(s):
- 7,393,762
- Application Number:
- 11/603,517
- OSTI ID:
- 941667
- Country of Publication:
- United States
- Language:
- English
Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers
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journal | June 2005 |
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