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Title: Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate

Abstract

A method of forming a nanostructure at low temperatures. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of at least one of nitrogen and oxygen is generated within a laser-sustained-discharge plasma source and a collimated beam of energetic neutral atoms and molecules is directed from the plasma source onto a surface of the substrate to form the nanostructure. The energetic neutral atoms and molecules in the plasma have an average kinetic energy in a range from about 1 eV to about 5 eV.

Inventors:
 [1];  [2]
  1. Los Alamos, NM
  2. Santa Fe, NM
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
941667
Patent Number(s):
7,393,762
Application Number:
11/603,517
Assignee:
Los Alamos National Secruity, LLC (Los Alamos, NM)
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Hoffbauer, Mark, and Mueller, Alex. Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate. United States: N. p., 2008. Web.
Hoffbauer, Mark, & Mueller, Alex. Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate. United States.
Hoffbauer, Mark, and Mueller, Alex. Tue . "Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate". United States. https://www.osti.gov/servlets/purl/941667.
@article{osti_941667,
title = {Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate},
author = {Hoffbauer, Mark and Mueller, Alex},
abstractNote = {A method of forming a nanostructure at low temperatures. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of at least one of nitrogen and oxygen is generated within a laser-sustained-discharge plasma source and a collimated beam of energetic neutral atoms and molecules is directed from the plasma source onto a surface of the substrate to form the nanostructure. The energetic neutral atoms and molecules in the plasma have an average kinetic energy in a range from about 1 eV to about 5 eV.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {7}
}

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Works referenced in this record:

Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers
journal, June 2005

  • Mueller, Alexander H.; Petruska, Melissa A.; Achermann, Marc
  • Nano Letters, Vol. 5, Issue 6
  • DOI: 10.1021/nl050384x