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Title: Standing Friedel waves: a quantum probe of electronic states in nanoscale devices

Abstract

We report a study of the dynamic response of electrons in a nanowire or a two-dimensional electron gas under a capacitively coupled ''spot gate'' driven by an AC voltage. A standing wave with wavevector equal to twice the Fermi wavevector is formed near the spot gate and near edges and boundaries, analogous to the static Friedel oscillations near defects at equilibrium. From the spatial modulation and resonance frequencies of the standing Friedel wave (SFW), electronic properties of nanoscale devices, including the Fermi velocity and eigenenergy spacings, can be measured directly.

Authors:
 [1];  [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Center for Nanophase Materials Sciences
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
941029
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review Letters; Journal Volume: 99
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE; QUANTUM WIRES; ELECTRON GAS; ELECTRONS; RESPONSE FUNCTIONS; MODULATION; OSCILLATIONS; PROBES; STANDING WAVES

Citation Formats

Lu, Jun-Qiang, Zhang, Xiaoguang, and Pantelides, Sokrates T. Standing Friedel waves: a quantum probe of electronic states in nanoscale devices. United States: N. p., 2007. Web. doi:10.1103/PhysRevLett.99.226804.
Lu, Jun-Qiang, Zhang, Xiaoguang, & Pantelides, Sokrates T. Standing Friedel waves: a quantum probe of electronic states in nanoscale devices. United States. doi:10.1103/PhysRevLett.99.226804.
Lu, Jun-Qiang, Zhang, Xiaoguang, and Pantelides, Sokrates T. Mon . "Standing Friedel waves: a quantum probe of electronic states in nanoscale devices". United States. doi:10.1103/PhysRevLett.99.226804.
@article{osti_941029,
title = {Standing Friedel waves: a quantum probe of electronic states in nanoscale devices},
author = {Lu, Jun-Qiang and Zhang, Xiaoguang and Pantelides, Sokrates T},
abstractNote = {We report a study of the dynamic response of electrons in a nanowire or a two-dimensional electron gas under a capacitively coupled ''spot gate'' driven by an AC voltage. A standing wave with wavevector equal to twice the Fermi wavevector is formed near the spot gate and near edges and boundaries, analogous to the static Friedel oscillations near defects at equilibrium. From the spatial modulation and resonance frequencies of the standing Friedel wave (SFW), electronic properties of nanoscale devices, including the Fermi velocity and eigenenergy spacings, can be measured directly.},
doi = {10.1103/PhysRevLett.99.226804},
journal = {Physical Review Letters},
number = ,
volume = 99,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2007},
month = {Mon Jan 01 00:00:00 EST 2007}
}
  • Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.
    Cited by 1
  • Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.
  • Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.
  • Cited by 1
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